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首页> 外文期刊>Surface & Coatings Technology >Direct calorimetric measurements in a PBII and deposition (PBII&D) experiment with a HiPIMS plasma source
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Direct calorimetric measurements in a PBII and deposition (PBII&D) experiment with a HiPIMS plasma source

机译:具有Hipims等离子体源的PBII和沉积(PBII&D)实验中的直接量热测量

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摘要

We report on direct calorimetric probe measurements in a plasma based ion implantation and deposition (PBII&D) system, using HiPIMS as plasma and deposition source. The combination of ion implantation and physical vapor deposition is a versatile system which allows successive and simultaneous coating, doping or cleaning of a substrate surface in a complex, finely adjustable system. Due to the pulsed nature of both processes, the delay between HiPIMS and PBII pulse is a crucial parameter which can be used to effectively tune the process according to the required needs. Since the delay defines at what time during the HiPIMS period the PBII pulse is applied to the substrate, it can also be utilized to obtain time resolved information about the ion density in the substrate's environment.
机译:我们在基于等离子体的离子植入和沉积(PBII&D)系统中的直接量热探针测量报告,使用Hipims作为等离子体和沉积源。 离子注入和物理气相沉积的组合是一种通用系统,其允许在复合物细腻可调节的系统中连续和同时涂覆,掺杂或清洁基板表面。 由于两个过程的脉冲性质,HIPIMS和PBII脉冲之间的延迟是一个关键参数,可用于根据所需需求有效地调整过程。 由于延迟定义了在HIPIMS周期期间的时间,因此PBII脉冲被施加到基板,也可以利用它来获得关于基板环境中的离子密度的时间分辨的信息。

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