Ab'/> Wear and corrosion properties of <ce:italic>in-situ</ce:italic> grown zirconium nitride layers for implant applications
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Wear and corrosion properties of in-situ grown zirconium nitride layers for implant applications

机译:原位的耐磨性和腐蚀性能

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AbstractZirconium (Zr) and its alloys are considered as promising materials for implant applications due to their excellent biocompatibility. However, the poor tribological properties of Zr are limiting its widespread applications. Therefore, in this investigation thermal nitriding of laser processed Zr was carried out with an aim to improve its wear and corrosion properties for potential wear resistant implant applications. The influences of nitriding temperature and time on the nitride layer thickness, phase constituents, wear and corrosion properties of nitrided Zr layer were studied. The Zr samples were nitrided at 600°C and 800°C for 2 and 6h in flowing nitrogen. The results demonstrated that the nitriding temperature had relatively stronger influence on the nitride layer thickness, wettability, hardness and wear resistance than nitriding time. In general, the nitride layers found to contain ZrN and ZrO2as major phases and Zr2N and Zr7O8N4as minor phases. The nitride layer thickness increased from 5±0.7μm to 26±5μm with increase in the nitriding temperature and time. Nitriding also enhanced the wettability and passivity of Zr. The samples nitrided at 600°C for 2h resulted in noblest Ecorrof ?130mV vs SCE with Icorrof 0.001μA/cm2in Hank's balanced salt solution. Lowestin vitrowear rate of 4.4×10?7mm3/N·m was recorded, against Al2O
机译:<![cdata [ 抽象 锆(Zr)及其合金被认为是由于它们优异的生物相容性而具有植入应用的有希望的材料。然而,Zr的差的摩擦性质限制了其广泛的应用。因此,在该研究中,进行激光加工Zr的热氮化,其目的是改善其耐磨性植入物应用的磨损和腐蚀性。研究了氮化温度和时间对氮化物层厚度,相成分,耐磨性,氮化Zr层的耐腐蚀性的影响。 Zr样品在流动的氮气中氮化为600℃和800℃,在2和6h中。结果表明,氮化温度对氮化物层厚度,润湿性,硬度和耐磨性的影响相对较强。通常,发现含有Zrn和ZrO 2 作为主要阶段和Zr 2 n和zr 7 O 8 N 4 作为次要阶段。氮化物层厚度从5±0.7μm增加到26±5μm,随着氮化温度和时间增加而增加。氮化也增强了Zr的润湿性和杂钝。在600℃下氮化的样品2h导致中载Noblest E CORR 的?130mv与I Corr 0.001μA/ cm 2 在hank的平衡盐溶液中。最低体外>斜体>磨损率为4.4×10 ?7 mm 3 / n·m被记录,针对Al 2 O

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