首页> 外文期刊>The Journal of Physiology >Engineering defined membrane-embedded elements of AMPA receptor induces opposing gating modulation by cornichon 3 and stargazin
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Engineering defined membrane-embedded elements of AMPA receptor induces opposing gating modulation by cornichon 3 and stargazin

机译:AMPA受体的工程定义膜嵌入元件通过Cornichon 3和Stargazin诱导反对的门控调节

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During excitatory synaptic transmission, various structurally unrelated transmembrane auxiliary subunits control the function of AMPA receptors (AMPARs), but the underlying mechanisms remain unclear. We identified lipid-exposed residues in the transmembrane domain (TMD) of the GluA2 subunit of AMPARs that are critical for the function of AMPAR auxiliary subunits, stargazin (Stg) and cornichon 3 (CNIH3). These residues are essential for stabilizing the AMPAR-CNIH3 complex in detergents and overlap with the contacts made between GluA2 TMD and Stg in the cryoEM structures. Mutating these residues had opposite effects on gating modulation and complex stability when Stg- and CNIH3-bound AMPARs were compared. Specifically, in detergent the GluA2-A793F formed an unstable complex with CNIIH3 but in the membrane the GluA2-A793F-CNIH3 complex expressed a gain of function. In contrast, the GluA2-A793F-Stg complex was stable, but had diminished gating modulation. GluA2-C528L destabilized the AMPAR-CNIH3 complex but stabilized the AMPAR-Stg complex, with overall loss of function in gating modulation. Furthermore, loss-of-function mutations in this TMD region cancelled the effects of a gain-of-function Stg carrying mutation in its extracellular loop, demonstrating that both the extracellular and the TMD elements contribute independently to gating modulation. The elements of AMPAR functionally recruited by auxiliary subunits are, therefore, located not only in the extracellular domains but also in the lipid accessible surface of the AMPAR. The TMD surface we defined is a potential target for auxiliary subunit-specific compounds, because engineering of this hotspot induces opposing functional outcomes by Stg and CNIH3. The collection of mutant-phenotype mapping provides a framework for engineering AMPAR gating using auxiliary subunits.
机译:在兴奋性突触透射期间,各种结构无关的跨膜辅助亚基控制AMPA受体(AMPAR)的功能,但下面的机制仍然不清楚。我们鉴定了对AMPars的Glua2亚基的跨膜结构域(TMD)中的脂质暴露的残基对AMPAR辅助亚基,Stargazin(STG)和Cornichon 3(CNIH3)的功能至关重要。这些残留物对于稳定洗涤剂中的AmPAR-CNIH3复合物并与Grua2 TMD和STG之间的触点重叠,这些残基是必不可少的。当比较STG和CNIH3结合的AMPars时,突变这些残留物对不同的效果和复合稳定性。具体地,在洗涤剂中,Glua2-A793F与CNIIH3形成不稳定的络合物,但在膜中,GLUA2-A793F-CNIH3复合物表达了功能的增益。相比之下,Glua2-A793F-STG复合物稳定,但较低的门控调节。 Glua2-C528L不稳定AMPAR-CNIH3复合物,但稳定了AMPAR-STG复合物,在门控调制中具有整体功能丧失。此外,该TMD区域中的功能丧失突变消除了函数STG携带突变在其细胞外环中的效果,证明了细胞外和TMD元件的贡献独立地与门控调制有关。因此,通过辅助亚基功能募集的AMPAR的元素不仅位于细胞外结构域,而且位于AMPAR的脂质可接近表面中。我们定义的TMD表面是辅助亚基特异性化合物的潜在靶标,因为该热点的工程通过STG和CNIH3诱导相反的功能结果。突变表型映射的集合为使用辅助亚基提供了一种工程AMPAR网栏的框架。

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