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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Interfacial Stability and Electronic Properties of Ag/M (M = Ni, Cu, W, and Pd) and Cu/Cr Interfaces
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Interfacial Stability and Electronic Properties of Ag/M (M = Ni, Cu, W, and Pd) and Cu/Cr Interfaces

机译:AG / M(m = Ni,Cu,W和Pd)和Cu / Cr接口的界面稳定性和电子性质

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摘要

The work of separation (W-sep), interface energy (gamma(int)), and electronic properties of Ag/M (M = Ni, Cu, W, and Pd) and Cu/Cr interfaces are systematically studied by using first-principles calculations. Three criteria, W-sep, gamma(int), and the quantum conductivity (G), have been proposed for the suitable electrical contact materials. The results indicate that Ag(111)/Ni(111), Ag(100)/W(100), and Ag(111)/W(110) interfaces have comparatively larger W-sep and lower positive gamma(int) among all the interfaces, which demonstrates that Ag/Ni and Ag/W interfaces are more suitable as nano-multilayer electrical contact materials than other interfaces. Moreover, the Ag(111)/Ni(111) interface has the largest G and the best dispersing arc ability among these three interfaces, and thus, it is chosen as the best candidate for the interface of nano-multilayer electrical contact material.
机译:分离(W-SEP),接口能量(γ(int))和AG / M(m = Ni,Cu,W和Pd)和Cu / Cr接口的电子特性通过使用第一 - 原则计算。 已经提出了三个标准,W-SEP,γ(int)和量子电导率(g),用于合适的电接触材料。 结果表明Ag(111)/ Ni(111),Ag(100)/ W(100)和Ag(111)/ W(110)界面在所有情况下具有相对较大的W-SEP和较低的γ(int) 界面,表明AG / Ni和Ag / W接口更适合于纳米多层电接触材料而不是其他接口。 此外,AG(111)/ Ni(111)界面具有最大的G和这三个界面中最好的分散电弧能力,因此,选择作为纳米多层电接触材料界面的最佳候选者。

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