Crystal Growth, Exponential Optical Absorption Edge, and Ground State Energy Level of PbS Quantum Dots Adsorbed on the (001), (110), and (111) Surfaces of Rutile-TiO2

摘要

It is important to investigate the dependencies of the optical absorption and the ground state energy level on the size of the semiconductor quantum dots (QDs) on fully studied single crystal TiO2 surfaces. The present study focuses on the systems comprising PbS QDs on (001), (110), and (111) surfaces of single crystal rutile-TiO2. By the optical absorption characterization, the average diameter of PbS QDs on a (001) surface is independent of the number of adsorption cycles, although those on (110) and (111) surfaces increase with the number of cycles. The rate of adsorption of PbS QDs on a (001) surface is higher than those grown on (110) and (111) surfaces. The results suggest that the crystal growth is caused by the difference of the surface energy of the substrate. The exponential optical absorption edge suggests that the structural disorder of PbS QDs on (001) and (110) surfaces increases as the number of adsorption cycles increases. On the other hand, that on a (111) surface decreases as the number of adsorption cycles increases. The ground state energy level of the PbS QDs is independent of the surface orientation of the single crystal rutile-TiO2, but shows negative polarization with the increase of adsorption cycles. It is owing to the possibility of the increase of color centers (electron capture by S- vacancies) in PbS QDs, corresponding to the increase of structural disorder.