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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >One-Step Incorporation of Nitrogen and Vanadium between Ti3C2Tx MXene Interlayers Enhances Lithium Ion Storage Capability
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One-Step Incorporation of Nitrogen and Vanadium between Ti3C2Tx MXene Interlayers Enhances Lithium Ion Storage Capability

机译:Ti3C2TX MxEn中夹层之间的氮气和钒的一步掺入增强了锂离子储存能力

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摘要

Two-dimensional (2D) transition-metal carbide materials termed MXene have attracted huge attention in the field of electrochemical energy storage. To this end, MXenes whose capability depends on the M transition elements represent a new paradigm extending beyond the realm of oft-explored elemental 2D materials beginning with graphene. However, the as-prepared MXenes suffer from unsatisfied capability due to the loss M elements during the etching process for the preparation of MXenes. Here, taking Ti3C2Tx as an example, we demonstrate that nitrogen and vanadium incorporation by means of microwave irradiation in NH4VO3-containing ethylene glycol can significantly improve the electrochemical performance of multilayered Ti3C2Tx MXene. While maintaining the 2D structure of MXene layers, the N and V elements are incorporated between the Ti3C2Tx MXene interlayers in the forms of C-V-OH, C-V-O, V-O, and Ti-O-N species. Specifically, at a V:Ti atomic ratio of about 1:30 (N:Ti = 0.29), N and V incorporation between the Ti3C2Tx interlayers gives rise to an increase in capability by about 40%, corresponding to an impressive reversible capacity of 92 mA h(-1) at 3 C rate after 1000 cycles. These results demonstrate that N(V)-incorporated Ti3C2Tx MXenes offer fascinating potential for high-performance electrode materials and provide guidelines for designing and engineering anode materials.
机译:二维(2D)过渡金属碳化物材料称为MXENE在电化学能量储存领域引起了巨大的关注。为此,其能力取决于M转换元素的mxEN表示,该延伸超出了以石墨烯开头的OFT探索的元素2D材料领域的遗址扩展。然而,由于在蚀刻过程中蚀刻过程中的蚀刻工艺,因此制备的MXEN患有不满足的能力。此处以Ti3C2Tx为例,我们证明借助于含NH4VO3的乙二醇中的微波辐射的氮气和钒掺入可以显着提高多层Ti3C2Tx mxene的电化学性能。在保持MxEne层的2D结构的同时,N和V元件掺入Ti3C2TX MxEn中夹层的形式的C-V-OH,C-V-O,V-O和Ti-O-N物种之间。具体地,在V:Ti原子比为约1:30(n:Ti = 0.29),Ti3C2Tx中间层之间的N和V掺入,其能力的增加约40%,相当于92的令人印象深刻的可逆容量MA H(-1)在1000次循环后3℃。这些结果表明,N(V)-inclorated Ti3C2TX Mxenes为高性能电极材料提供了迷人的电位,并提供设计和工程阳极材料的指导。

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    Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;

    Yanshan Univ Natl Engn Res Ctr Equipment &

    Technol Cold Strip Coll Mech Engn Qinhuangdao 066004 Hebei Peoples R China;

    Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;

    Suzhou Univ Sci &

    Technol Inst Mat Sci &

    Devices Suzhou 215009 Peoples R China;

    Zhengzhou Univ Sch Mat Sci &

    Engn Zhengzhou 450001 Peoples R China;

    Zhengzhou Univ Sch Mat Sci &

    Engn Zhengzhou 450001 Peoples R China;

    Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;

    Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;

    Yanshan Univ Natl Engn Res Ctr Equipment &

    Technol Cold Strip Coll Mech Engn Qinhuangdao 066004 Hebei Peoples R China;

    Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
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