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Three- and four-electron integrals involving Gaussian geminals: Fundamental integrals, upper bounds, and recurrence relations

机译:涉及高斯雄锭的三和四电子积分:基本积分,上限和复发关系

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摘要

We report the three main ingredients to calculate three- and four-electron integrals over Gaussian basis functions involving Gaussian geminal operators: fundamental integrals, upper bounds, and recurrence relations. In particular, we consider the three- and four-electron integrals that may arise in explicitly correlated F12 methods. A straightforward method to obtain the fundamental integrals is given. We derive vertical, transfer, and horizontal recurrence relations to build up angular momentum over the centers. Strong, simple, and scaling-consistent upper bounds are also reported. This latest ingredient allows us to compute only the O(N-2) significant three- and four-electron integrals, avoiding the computation of the very large number of negligible integrals. Published by AIP Publishing.
机译:我们报告了三个主要成分,计算了高斯基础职能的三个和四电子积分,涉及高斯雄芯片运营商:基本积分,上限和复发关系。 特别地,我们考虑在明确相关的F12方法中可能出现的三个和四电子积分。 给出了获得基本积分的直接方法。 我们得出垂直,转移和水平复发关系,以积聚中心的角色。 还报道了强大,简单,缩放的上限。 这种最新成分允许我们仅计算O(N-2)重要的三和四电子积分,避免计算非常大量的可忽略不计的积分。 通过AIP发布发布。

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