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首页> 外文期刊>Polymer: The International Journal for the Science and Technology of Polymers >In-situ orientation and crystal growth kinetics of P3HT in drop cast P3HT:PCBM films
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In-situ orientation and crystal growth kinetics of P3HT in drop cast P3HT:PCBM films

机译:P3HT中P3HT的原位取向和晶体生长动力学:PCBM薄膜

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摘要

Effect of casting solvents on drop cast thin films of conductive conjugated polymers is largely studied by characterizing post processed films. However, the results have often been inconclusive due to the complexity of the in-situ evolution of structures. In this research we implement in-situ grazing incidence wide angle x-ray scattering (GIWAXS) approach to extracting morphological evolution information during film formation in model Poly(3-hexylthiophehe) (P3HT): [6,6]-phenyl C61-butyric acid methyl ester (PCBM) blend films that have otherwise been widely studied. Casting solvents include chloroform, benzene and tetrahydrothiophene (THT), carefully selected for their relative solubilities of P3HT and PCBM. Individual casting solvent studies show that the casting solvents' solubility for P3HT and pure solvent boiling point, along with residual solvent content in the films have significant implications on final thin film morphology and crystallization of its constituent components. For example, the orientations of P3HT in P3HT:PCBM films, cast from different solvents, are largely affected by the individual solubilities of P3HT and PCBM, and substrate surface energy. On the other hand PCBM crystal growth from different PCBM solutions predominantly depends on the solubilities of PCBM in the solvents and boiling points of solvents. In this study we correlate and distinguish the drying behavior of the blend films with respect to the drying behavior of its constituent components. These results have important ramifications for controlling desired morphology for polymer electronics, such as organic photovoltaics (OPV), organic field effect transistor (OFET) and photo-detectors. (C) 2017 Elsevier Ltd. All rights reserved.
机译:通过在处理后薄膜表征后,基本研究了导电共轭聚合物的浇铸溶剂对导电共轭聚合物的滴铸薄膜的影响。然而,由于结构的原位演化的复杂性,结果往往是不确定的。在本研究中,我们实施原位放牧发射广角X射线散射(Giwaxs)方法,以在型号聚(3-己烯烯烯烯芯片)(P3HT)中的薄膜形成期间提取形态进化信息:[6,6] -phenyl c61-丁基已经广泛研究的酸甲酯(PCBM)共混膜。铸造溶剂包括氯仿,苯和四氢噻吩(THT),仔细选择P3HT和PCBM的相对溶解度。个体铸造溶剂研究表明,铸造溶剂对P3HT和纯溶剂沸点的溶解度以及膜中的残余溶剂含量对其成分组分的最终薄膜形态和结晶具有显着影响。例如,P3HT中P3HT的取向:PCBM薄膜,来自不同溶剂的PCBM薄膜,主要受P3HT和PCBM的个体溶解度以及基板表面能的影响。另一方面,来自不同PCBM溶液的PCBM晶体生长主要取决于PCBM在溶剂中的溶剂和沸点溶剂的溶解度。在该研究中,我们将共混膜的干燥行为相对于其成分组分的干燥行为的相关性和区分。这些结果具有用于控制聚合物电子器件的所需形态的重要条件,例如有机光伏(OPV),有机场效应晶体管(OFET)和光检测器。 (c)2017 Elsevier Ltd.保留所有权利。

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