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首页> 外文期刊>Physics of plasmas >Suppression of high-power microwave window breakdown by the sweeping-out-electron effect with an external dc bias electric field
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Suppression of high-power microwave window breakdown by the sweeping-out-electron effect with an external dc bias electric field

机译:抑制高功率微波窗口通过外部直流偏置电场的扫描外电子效应缩小

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摘要

To suppress microwave window breakdown, an external parallel dc bias electric field is applied to sweep out the electrons from the discharge zone. The development of microwave window breakdown under an external dc electric field is investigated using particle-in-cell and Monte Carlo collision simulation. The results show that the number of multipactor electrons decreases with the strength of the external unidirectional dc electric field when the size of the microwave window is finite. In addition, the threshold of breakdown is strongly influenced by the direction of the external bidirectional dc electric field. When the electric field is directed from the center to the edge of the microwave window, breakdown occurs more readily than in the absence of the electric field. However, when the electric field is directed toward the center of the microwave window, the discharge process starts at the edge of the window and develops to the center of the window. This is because a smaller density of electrons at the window edge results in a smaller gas pressure and the low gas pressure above the dielectric surface thus makes formation of the plasma more difficult. As a result, the early stage of breakdown is suppressed and the maximum transmitting power is enhanced.
机译:为了抑制微波窗口击穿,施加外部并联DC偏置电场以从放电区扫除电子。使用粒子内电池和蒙特卡罗碰撞仿真研究了外部直流电场下微波窗击穿的开发。结果表明,当微波窗的尺寸有限时,随着外部单向直流电场的强度,多移座电子的数量随着外部单向直流电场的强度而减小。另外,击穿的阈值受到外部双向直流电场的方向的强烈影响。当电场从中心指向微波窗口的边缘时,击穿比在没有电场的情况下更容易地发生故障。然而,当电场朝向微波窗的中心被引导时,放电过程开始在窗口的边缘处并且发展到窗口的中心。这是因为窗口边缘处的电子的较小密度导致较小的气体压力和介电表面上方的低气体压力因此使得形成等离子体更困难。结果,抑制了击穿的早期阶段,并且增强了最大发射功率。

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