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首页> 外文期刊>Physical Review, B. Condensed Matter >High-field magnetotransport properties of La2/3Sr1/3MnO3 and Nd2/3Sr1/3MnO3 systems
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High-field magnetotransport properties of La2/3Sr1/3MnO3 and Nd2/3Sr1/3MnO3 systems

机译:LA2 / 3SR1 / 3MNO3和ND2 / 3SR1 / 3MNO3系统的高场磁传输性能

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The electrical resistivity (rho), magnetoresistance (MR), Hall coefficient (R-H) of La2/3Sr1/3MnO3 thin film, and MR of Nd2/3Sr1/3MnO3 polycrystalline samples have been studied over a wide temperature range and in high-magnetic fields up to 20 T. In the ferromagnetic (FM) phase, rho(T) follows an expression a(0)+a(2)T(2) +a(4)T(4) with and without applied field. This temperature dependence may be understood on the basis of scattering of charge carriers due to spin fluctuations. At low temperatures, magnetoconductivity of Nd2/3Sr1/3MnO3 increases linearly with H up to 20 T whereas for La2/3Sr1/3MnO3 deviation from linearity is observed in the high-field region. The Hall coefficient of La2/3Sr1/3MnO3 shows strong temperature dependence due to the skew scattering by the magnetic moments and exhibited the temperature dependence (T-2) principally due to that of the magnetization. The anomalous part of the Hall coefficient is zero at T=0, becomes negative with increasing temperature, and its magnitude is comparable with a normal component. The anomalous nature of the Hall resistivity is also reflected in the field dependence of R-H. The carrier density calculated from the normal Hall coefficient part is 3.5 x 10(21)/cc. [S0163-1829(98)08617-2]. [References: 30]
机译:在宽温度范围和高磁场中,研究了La2 / 3SR1 / 3MnO3薄膜的电阻率(RHO),磁阻(MR),LA2 / 3SR1 / 3MNO3薄膜和ND2 / 3SR1 / 3MNO3多晶样品的MR在铁磁性(FM)相中,rhO(t)遵循表达式A(0)+ A(2)T(2)+ A(4)T(4),具有和不施加的场。可以基于旋转波动引起的电荷载体的散射来理解该温度依赖性。在低温下,ND2 / 3SR1 / 3MNO3的磁导性与高达20t线性增加,而在高场区域中观察到La2 / 3SR1 / 3MNO3偏差。 LA2 / 3SR1 / 3MNO3的霍尔系数表示由于磁矩的偏斜散射而强烈的温度依赖性,并且由于磁化的偏移而主要依赖性(T-2)。霍尔系数的异常部分在T = 0处为零,随着温度的增加而变为负,其幅度与正常成分相当。霍尔电阻率的异常性质也反映在R-H的场依赖性中。从正常霍尔系数部分计算的载流子密度为3.5×10(21)/ CC。 [S0163-1829(98)08617-2]。 [参考:30]

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