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首页> 外文期刊>Physical review, B >Polaronic quasiparticle picture for generation dynamics of coherent phonons in semiconductors: Transient and nonlinear Fano resonance
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Polaronic quasiparticle picture for generation dynamics of coherent phonons in semiconductors: Transient and nonlinear Fano resonance

机译:半导体中相干声子的优势Quasiparticle图片:瞬态和非线性扇形共振

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摘要

We examine generation dynamics of coherent phonons in both polar and nonpolar semiconductors, such as GaAs and Si, based on a polaronic-quasiparticle (PQ) model. In this model, the PQ operator is composed of two kinds of operators: one is a quasiboson operator, defined as a linear combination of a set of pairs of electron operators, and the other is a longitudinal optical (LO) phonon operator. In particular, the problem of transient and nonlinear Fano resonance (FR) is tackled, where the vestige of this quantum interference effect was observed exclusively in lightly n-doped Si immediately after carriers were excited by an ultrashort pulse laser [M. Hase et al., Nature (London) 426, 51 (2003)], although not observed yet in GaAs. The PQ model enables us to show straightforwardly that the phonon energy state is embedded in continuum states formed by a set of adiabatic eigenstates of the quasiboson; this energy configuration is a necessary condition of the manifestation of the transient FR in the present optically nonlinear system. Numerical calculations are done for photoemission spectra relevant to the retarded longitudinal dielectric function of transient photoexcited states and for power spectra relevant to the LO-phonon displacement function of time. The photoemission spectra show that in undoped Si, an asymmetric spectral profile characteristic of FR comes into existence immediately after the instantaneous carrier excitation to fade out gradually, whereas in undoped GaAs, no asymmetry in spectra appears in the whole temporal region. The similar results are also obtained in the power spectra. These results are in harmony with the reported experimental results. It is found that the obtained difference in spectral profile between undoped Si and GaAs is attributed to a phase factor of an effective interaction between the LO phonon and the quasiboson. More detailed discussion of the FR dynamics is made in the text.
机译:基于极性 - Quasiparticle(PQ)模型,我们在极性和非极性半导体(例如GaAs和Si)中的相干声子的生成动态。在该模型中,PQ操作员由两种运算符组成:一个是拟核算子,定义为一组电子运算符的线性组合,另一组是纵向光学(LO)声子操作员。特别地,解决了瞬态和非线性扇形共振(FR)的问题,其中在通过超短脉冲激光器激发载体后立即在轻微的N掺杂Si中观察到这种量子干扰效果的痕迹[M. Hase等人,大自然(伦敦)426,51(2003)]虽然尚未观察到GaAs。 PQ模型使我们能够简单地表明声子能量状态嵌入在由拟毒的一组绝热特征形成的连续态中;该能量配置是本光学非线性系统中瞬态FR的表现的必要条件。与瞬态光透明态的延迟纵向介质函数相关的光电激发谱进行数值计算,以及与时间的LO-Phonon位移函数相关的功率谱。光曝光光谱显示,在未掺杂的Si中,FR的不对称谱曲线特性在瞬时载波激发后立即存在于逐渐逐渐消失,而在未掺杂的GaAs中,整个时间区域中不会出现光谱中的不对称性。在功率谱中也可以获得类似的结果。这些结果与报告的实验结果相协调。结果发现,未掺杂的Si和GaAs之间的光谱分布的差异归因于Lo声子和拟链球菌之间有效相互作用的相位因子。对FR动力学的更详细讨论是在文本中进行的。

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  • 来源
    《Physical review, B》 |2017年第1期|共16页
  • 作者单位

    Univ Tsukuba Grad Sch Pure &

    Appl Sci Doctoral Program Mat Sci Tsukuba Ibaraki 3058573 Japan;

    Univ Tsukuba Fac Pure &

    Appl Sci Div Mat Sci Tsukuba Ibaraki 3058573 Japan;

    Univ Tsukuba Fac Pure &

    Appl Sci Div Appl Phys Tsukuba Ibaraki 3058573 Japan;

    Univ Tsukuba Fac Pure &

    Appl Sci Div Mat Sci Tsukuba Ibaraki 3058573 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 固体物理学;
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