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Terahertz optical Hall effect in monolayer MoS2 in the presence of proximity-induced interactions

机译:在邻近诱导的相互作用存在下单层MOS2的Terahertz光学霍尔效果

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摘要

The effect of proximity-induced interactions such as Rashba spin-orbit coupling (SOC) and exchange interaction on the electronic and optical properties of n-type monolayer (ML) MoS2 is investigated. We predict and demonstrate that the Rashba SOC can induce an in-plane spin splitting with terahertz (THz) energy, while the exchange interaction lifts the energy degeneracy in different valleys. Thus, spin polarization can be achieved in an n-type ML MoS2 and valley Hall or optical Hall effect can be observed using linearly polarized THz radiation. In such a case, the transverse optical conductivity sigma(xy) (omega) results from spin-flip transition within spin-split conduction bands and from the fact that contributions from electrons with different spin orientations in different valleys can no longer be canceled out. Interestingly, we find that for fixed effective Zeeman field (or exchange interaction) the lowest spin-split conduction band in ML MoS2 can be tuned from one in the K valley to another one in the K' valley by varying the Rashba parameter lambda(R). Therefore, by changing lambda(R) we can turn the sign of the spin polarization and Im sigma(xy) (omega) from positive to negative. Moreover, we find that the dominant contribution of the selection rules to sigma(xx)(omega) is from electrons in the K valley and to sigma(xy) (omega) is from electrons in the K' valley. These important and interesting theoretical findings can be helpful to experimental observation of the optical Hall effect in valleytronic systems using linearly polarized THz radiation fields.
机译:研究了诸如RashBA旋转轨道耦合(SOC)和交换相互作用的接近诱导的相互作用的影响N型单层(ML)MOS2的电子和光学性质。我们预测并证明Rashba SoC可以诱导与太赫兹(THz)能量的平面内旋转分裂,而交换相互作用将升高不同谷的能量退化。因此,可以在N型ML MOS2和谷霍尔或光学霍尔效果中实现自旋极化,可以使用线性偏振的THz辐射观察。在这种情况下,横向光学导电性Sigma(XY)(ω)由旋转式传导带内的旋转翻转转变产生,并且从不同谷的不同旋转取向的电子贡献中不能再抵消。有趣的是,我们发现,对于固定有效的Zeeman字段(或换互操作),通过改变Rashba参数Lambda(R.)可以从K'谷中的k谷中的另一个在k谷中的一个中调谐M1 MOS2中的最低自旋分流导通带。 )。因此,通过改变Lambda(R),我们可以将自旋极化和Im Sigma(XY)(ω)的符号从阳性变为负。此外,我们发现选择规则对Sigma(XX)(Omega)的主导贡献来自K谷的电子,并且到Sigma(XY)(ω)是来自K'谷的电子。这些重要且有趣的理论发现可以有助于使用线性偏振THz辐射场对谷坑系统中的光学霍尔效应的实验观察。

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  • 来源
    《Physical review, B》 |2020年第24期|共12页
  • 作者单位

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Chinese Acad Sci Inst Solid State Phys Key Lab Mat Phys Hefei 230031 Peoples R China;

    Yunnan Univ Sch Phys &

    Astron Kunming 650091 Yunnan Peoples R China;

    Yunnan Univ Sch Phys &

    Astron Kunming 650091 Yunnan Peoples R China;

    Univ Antwerp Dept Phys Groenenborgerlaan 171 B-2020 Antwerp Belgium;

    Yunnan Univ Sch Phys &

    Astron Kunming 650091 Yunnan Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 固体物理学;
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