Electronic transport in one-dimensional Floquet topological insulators via topological and nontopological edge states

摘要

Based on probing electronic transport properties, we propose an experimental test for the recently discovered rich topological phase diagram of one-dimensional Floquet topological insulators with Rashba spin-orbit interaction [Kennes et al., Phys. Rev. B 100, 041103(R) (2019)]. Using the Keldysh-Floquet formalism, we compute electronic transport properties of these nanowires, where we propose to couple the leads in such a way, as to primarily address electronic states with a large weight at one edge of the system. By tuning the Fermi energy of the leads to the center of the topological gap, we are able to directly address the topological edge states, granting experimental access to the topological phase diagram. Surprisingly, when tuning the lead Fermi energy to special values in the bulk which coincide with extremal points of the dispersion relation, we find additional peaks of similar magnitude to those caused by the topological edge states. These peaks reveal the presence of continua of states centered around aforementioned extremal points whose wave functions are linear combinations of delocalized bulk states and exponentially localized edge states, where the ratio of edge-to bulk-state amplitude is maximal at the extremal point of the dispersion. We discuss the transport properties of these nontopological edge states, explain their emergence in terms of an intuitive yet quantitative physical picture and discuss their relationship with Van Hove singularities in the bulk of the system. The mechanism giving rise to these states is not specific to the model we consider here, suggesting that they may be present in a wide class of one-dimensional systems.