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Tuning vortex fluctuations and the resistive transition in superconducting films with a thin overlayer

机译:用薄叠层调整涡旋波动和超导膜中的电阻过渡

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It is shown that the temperature of the resistive transition T-r of a superconducting film can be increased by a thin superconducting or normal overlayer. For instance, deposition of a highly conductive thin overlayer onto a dirty superconducting film can give rise to an "antiproximity effect," which manifests itself in an initial increase of T-r(d(2)) with the overlayer thickness d(2) followed by a decrease of T-r(d(2)) at larger d(2). Such a nonmonotonic thickness dependence of T-r(d(2)) results from the interplay of the increase of a net superfluid density mitigating phase fluctuations and the suppression of the critical temperature T-r due to the conventional proximity effect. This behavior of T-r(d(2)) is obtained by solving the Usadel equations to calculate the temperature of the Berezinskii-Kosterlitz-Thouless transition, and the temperature of the resistive transition due to thermally activated hopping of single vortices in dirty bilayers. The theory incorporates relevant material parameters such as thicknesses and conductivities of the layers, the interface contact resistance between them, and the subgap quasiparticle states, which affect both phase fluctuations and the proximity effect suppression of T-c. The transition temperature T-r can be optimized by tuning the overlayer parameters, which can significantly weaken vortex fluctuations and nearly restore the mean-field critical temperature. The calculated behavior of T-r(d(2)) may explain the nonmonotonic dependence of T-r(d(2)) observed on (Ag,Au,Mg,Zn)-coated Bi films, Ag-coated Ga and Pb films, or NbN and NbTiN films on AN buffer layers. These results suggest that bilayers can be used as model systems for systematic investigations of optimization of fluctuations in superconductors.
机译:结果表明,可以通过薄的超导或正常覆盖层增加超导膜的电阻转变T-R的温度。例如,在脏超导膜上沉积在脏超导膜上可以产生“抗激效应”,其在具有覆盖层厚度D(2)的TR(D(2))的初始增加中表现出自身的初始增加,然后是较大的D(2)的Tr(d(2))的减少。这种非单调厚度依赖性T-R(D(2))的相互作用是由于常规接近效应导致的净超流密度减轻相波动的相互作用和临界温度T-R的抑制。通过求解USADEL方程以计算BEREZINSKII-KSTERLITZ-TFOULS转变的温度,以及由于在脏双层中的单涡体的热活化跳跃引起的电阻转变温度的温度来获得T-R(D(2))的这种行为。该理论包括相关材料参数,例如层的厚度和电导率,它们之间的界面接触电阻,以及对T-C的相位波动和接近效应抑制的副Quasiparticle状态。过渡温度T-R可以通过调节覆盖层参数来优化,这可以显着削弱涡流波动,并且几乎恢复平均临界温度。 Tr(d(2))的计算行为可以解释在(Ag,Au,mg,Zn) - 涂覆的BI膜,Ag涂覆的Ga和Pb膜,或Nbn上观察到Tr(d(2))的非单调依赖性。和缓冲层上的NBTIN膜。这些结果表明,双层可以用作系统研究超导体波动优化的模型系统。

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