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首页> 外文期刊>Physical review, B >Electronic structure, magnetism, and exchange integrals in transition-metal oxides: Role of the spin polarization of the functional in DFT plus U calculations
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Electronic structure, magnetism, and exchange integrals in transition-metal oxides: Role of the spin polarization of the functional in DFT plus U calculations

机译:过渡金属氧化物中的电子结构,磁性和交换积分:在DFT加上功能的旋转偏振的作用加上U计算

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摘要

Density functional theory augmented with Hubbard-U corrections (DFT+U) is currently one of the most widely used methods for first-principles electronic structure modeling of insulating transition-metal oxides (TMOs). Since U is relatively large compared to bandwidths, the magnetic excitations in TMOs are expected to be well described by a Heisenberg model. However, in practice the calculated exchange parameters J(ij) depend on the magnetic configuration from which they are extracted and on the functional used to compute them. In this work we investigate how the spin polarization dependence of the underlying exchange-correlation functional influences the calculated magnetic exchange constants of TMOs. We perform a systematic study of the predictions of calculations based on the local density approximation plus U (LDA+U) and the local spin density approximation plus U (LSDA+U) for the electronic structures, total energies, and magnetic exchange interactions Jij extracted from ferromagnetic (FM) and antiferromagnetic (AFM) configurations of several transition-metal oxide materials. We report that for realistic choices of Hubbard U and Hund's J parameters, LSDA+U and LDA+U calculations result in different values of the magnetic exchange constants and band gap. The dependence of the band gap on the magnetic configuration is stronger in LDA+U than in LSDA+U and we argue that this is the main reason why the configuration dependence of Jij is found to be systematically more pronounced in LDA+U than in LSDA+U calculations. We report a very good correspondence between the computed total energies and the parametrized Heisenberg model for LDA+U calculations, but not for LSDA+U, suggesting that LDA+U is a more appropriate method for estimating exchange interactions.
机译:利用哈伯德 - U校正(DFT + U)增强密度功能理论是目前使用绝缘过渡金属氧化物(TMOS)的第一原理电子结构建模最广泛使用的方法之一。由于与带宽相比,u比较大,因此预计TMOS中的磁激发将通过Heisenberg模型进行很好的描述。但是,在实践中,计算的交换参数j(ij)取决于从其提取的磁配置以及用于计算它们的功能。在这项工作中,我们研究了潜在的交换相关功能的自旋极化依赖性如何影响TMOS计算的磁交换常数。我们对基于局部密度近似加上U(LDA + U)的计算预测的系统研究,以及用于电子结构,总能量和磁交换相互作用Jij提取的局部自旋密度近似加上U(LSDA + U)来自铁磁(FM)和反铁磁性(AFM)构造几种过渡金属氧化物材料。我们报告称,对于Hubbard U和Hund的J参数的现实选择,LSDA + U和LDA + U计算会导致磁交换常数和带隙的不同值。 LDA + U比在LSDA + U中的磁共配置对磁性配置的依赖性依据,我们认为这是jij的配置依赖性在LDA + U中的配置依赖性而不是在LSDA中的主要原因+ U计算。我们在计算的总能量和LDA + U计算的参数化Heisenberg模型之间报告了非常好的对应关系,但不适用于LSDA + U,表明LDA + U是更合适的估算交换交互的方法。

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  • 来源
    《Physical review, B》 |2018年第18期|共7页
  • 作者单位

    Uppsala Univ Div Mat Theory Dept Phys &

    Astron Box 516 SE-75120 Uppsala Sweden;

    Uppsala Univ Div Mat Theory Dept Phys &

    Astron Box 516 SE-75120 Uppsala Sweden;

    Columbia Univ Dept Phys 538 W 120th St New York NY 10027 USA;

    Uppsala Univ Div Mat Theory Dept Phys &

    Astron Box 516 SE-75120 Uppsala Sweden;

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  • 正文语种 eng
  • 中图分类 固体物理学;
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