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Unusually large chemical potential shift in a degenerate semiconductor: Angle-resolved photoemission study of SnSe and Na-doped SnSe

机译:退化半导体中异常大的化学潜力转变:SNSE和Na-掺杂的SNSE的角度解析的光电研究

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摘要

We have studied the electronic structure of SnSe and Na-doped SnSe by means of angle-resolved photoemission spectroscopy. The valence-band top reaches the Fermi level by the Na doping, indicating that Na-doped SnSe can be viewed as a degenerate semiconductor. However, in the Na-doped system, the chemical potential shift with temperature is unexpectedly large and is apparently inconsistent with the degenerate semiconductor picture. The large chemical potential shift and anomalous spectral shape are key ingredients for an understanding of the novel metallic state with the large thermoelectric performance in Na-doped SnSe.
机译:我们通过角度分辨的光曝光光谱研究了SNSE和Na-掺杂SNSE的电子结构。 价带顶部通过Na掺杂到达FERMI水平,表明Na掺杂的SNSE可以被视为退化半导体。 然而,在Na掺杂的系统中,具有温度的化学电位偏移出乎意料地大,并且显然与退化半导体图像显然不一致。 大化学势偏移和异常光谱形状是理解新的金属状态,具有大的热电性能在Na-掺杂的Snse中的关键成分。

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  • 来源
    《Physical review, B》 |2018年第12期|共5页
  • 作者单位

    Waseda Univ Dept Appl Phys Shinjuku Ku Tokyo 1698555 Japan;

    Waseda Univ Dept Appl Phys Shinjuku Ku Tokyo 1698555 Japan;

    Waseda Univ Dept Appl Phys Shinjuku Ku Tokyo 1698555 Japan;

    Univ Roma La Sapienza Dept Phys I-00185 Rome Italy;

    Hiroshima Univ Hiroshima Synchrotron Radiat Ctr Higashihiroshima Hiroshima 7390046 Japan;

    Hiroshima Univ Hiroshima Synchrotron Radiat Ctr Higashihiroshima Hiroshima 7390046 Japan;

    Hiroshima Univ Hiroshima Synchrotron Radiat Ctr Higashihiroshima Hiroshima 7390046 Japan;

    Northwestern Univ Dept Chem Evanston IL 60208 USA;

    Northwestern Univ Dept Chem Evanston IL 60208 USA;

    Northwestern Univ Dept Chem Evanston IL 60208 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 固体物理学;
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