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首页> 外文期刊>Physica, B. Condensed Matter >Structural and luminescence properties of self-yellow emitting undoped and (Ca, Ba, Sr)-doped Zn2V2O7 phosphors synthesized by combustion method
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Structural and luminescence properties of self-yellow emitting undoped and (Ca, Ba, Sr)-doped Zn2V2O7 phosphors synthesized by combustion method

机译:自黄色发光的结构和发光性能未掺杂和(CA,Ba,SR) - 通过燃烧方法合成的Zn2V2O7磷光体

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摘要

A self-activated yellow emitting Zn2V2O7 was synthesized by combustion method. The influence of the processing parameters such as synthesis temperature and dopants concentration on the structure, morphology and luminescence properties was investigated. The X-ray diffraction (XRD) analysis confirmed that the samples have a tetragonal structure and no significant structural change was observed in varying both the synthesis temperature and the dopants concentration. The estimated average crystallite size was 78 nm for the undoped samples synthesized at different temperatures and 77 nm for the doped samples. Scanning electron microscope (SEM) images showed agglomerated hexagonal-shaped particles with straight edges at low temperatures and the shape of the particles changed to cylindrical structures at moderate temperatures. At higher temperatures, the morphology changed completely. However, the morphologies of the doped samples looked alike. The photoluminescence (PL) of the product exhibited broad emission bands ranging from 400 to 800 nm. The best luminescence intensity was observed for the undoped Zn2V2O7 samples and those synthesized at 600 degrees C. Any further increase in synthesis temperature, type and concentration of dopants led to a decrease in the luminescence intensity. The broad band emission peak of Zn2V2O7 consisted of two broad bands corresponding to emissions from the Em(1)(T-3(2) -> (1)A(1)) and Em(2) (T-3(1) -> (1)A(1)) transitions.
机译:通过燃烧方法合成自活化的黄色发光Zn2V2O7。研究了处理参数如合成温度和掺杂剂浓度对结构,形态和发光性质的影响。 X射线衍射(XRD)分析证实,样品具有四边形结构,并且在改变合成温度和掺杂剂浓度时不会观察到显着的结构变化。对于在不同温度合成的未掺杂样品和77nm的掺杂样品,估计的平均微晶尺寸为78nm。扫描电子显微镜(SEM)图像显示在低温下具有直边的附聚六方形颗粒,并且颗粒的形状变为中等温度的圆柱结构。在较高的温度下,形态完全变化。然而,掺杂样品的形态看起来很像。产品的光致发光(PL)表现出宽的发射带,范围为400至800nm。未掺杂的Zn2V2O7样品观察到最佳发光强度,并且在600℃合成的那些中合成的那些。合成温度的任何进一步增加,掺杂剂的类型和浓度导致发光强度的降低。 Zn2V2O7的宽带发射峰由对应于来自EM(1)(T-3(2) - >(1)A(1))和EM(2)(T-3)的排放的两条宽带组成 - >(1)A(1))过渡。

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