A write-once-read-many-times memory based on a sol-gel derived copper oxide semiconductor

摘要

In this paper, we demonstrate the write-once-read-many-times (WORM) characteristics of the Al/CuxO/n(+)-Si memory device. The CuxO oxide semiconductor used as the resistive switching layer was fabricated using a sol-gel process. The device is initially in a high-resistance state (HRS) with a resistance of similar to 10(7)Omega. The writing process only occurs in the positive voltage region regardless of the initial voltage sweep direction, followed by a resistance switching to a value of similar to 10(3)Omega.Then the memory remains in the low-resistance state (LRS) in the following voltage cycles. The read-endurance and read-disturb tests were performed to the memory device. The memory window is 10(4) for 10(4) pulse cycles. The sol-gel CuxO thin film is verified and analyzed by ultraviolet-visible (UV-vis) spectroscopy and X-ray photoelectron spectroscopy (XPS). The resistive switching and carrier transport mechanisms are also investigated.