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Intercalation of first row transition metals inside covalent-organic frameworks (COFs): a strategy to fine tune the electronic properties of porous crystalline materials

机译:第一行过渡金属内部的共价 - 有机框架(COF):一种微调多孔晶体材料的电子性质的策略

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Covalent-organic frameworks (COFs) have emerged as an important class of nano-porous crystalline materials with many potential applications. They are intriguing platforms for the design of porous skeletons with special functionality at the molecular level. However, despite their extraordinary structural tunability, it is difficult to control their electronic properties, thus hindering the potential implementation in electronic devices. A new family of nanoporous materials, COFs intercalated with first row transition metals, is proposed to address this fundamental drawback - the lack of electronic tunability. Using first-principles calculations, we designed 31 new COF materials in silico by intercalating all of the first row transition metals (TMs) with boroxine-linked and triazine-linked COFs: COF-TM-x (where TM = Sc-Zn and x = 3-5). We investigated their structure and electronic properties. Specifically, we predict that the band gap and density of states (DOS) of COFs can be controlled by intercalating first row transition metal atoms (TM: Sc-Zn) and fine tuned by the concentration of TMs. We also found that the d-subshell electron density of the TMs plays a main role in determining the electronic properties of the COFs. Thus intercalated-COFs provide a new strategy to control the electronic properties of materials within a porous network. This work opens up new avenues for the design of TM-intercalated materials with promising future applications in nanoporous electronic devices, where a high surface area coupled with fine-tuned electronic properties is desired.
机译:共价 - 有机框架(COF)已成为具有许多潜在应用的重要纳米多孔晶体材料。它们是在分子水平设计具有特殊功能的多孔骨架的迷恋平台。然而,尽管它们具有非凡的结构可调性,但难以控制其电子特性,从而阻碍了电子设备的潜在实现。建议采用第一行过渡金属嵌入的新纳米多孔材料系列,以解决这一基本缺点 - 缺乏电子可调性。使用一原则计算,我们通过将所有第一行过渡金属(TMS)与硼罗嗪连接和三嗪连接的COF(其中TM = SC-Zn和X和X为设计了31种硅(TM)设计了31种新的COF材料= 3-5)。我们调查了它们的结构和电子特性。具体地,我们预测COF的状态(DOS)的带隙和密度可以通过嵌入第一行过渡金属原子(TM:SC-Zn)来控制,并通过TM的浓度进行微调。我们还发现TMS的D-SubShell电子密度在确定COF的电子性质方面发挥了主要作用。因此,嵌入式COF提供了一种控制多孔网络内材料的电子特性的新策略。这项工作开辟了在纳米多孔电子器件中具有未来应用的TM插入材料的新途径,其中需要具有微调电子特性的高表面积。

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