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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Unusual triplet-triplet annihilation in a 3D copper(i) chloride coordination polymer
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Unusual triplet-triplet annihilation in a 3D copper(i) chloride coordination polymer

机译:3D铜(I)氯化物配位聚合物中的不寻常的三重态 - 三重态湮灭

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摘要

A new coordination polymer (CP) defined as [Cu2Cl2(EtS(CH2)(4)SEt)(4)](n) (CP2) was prepared by reacting EtS(CH2)(4)SEt with CuCl in acetonitrile in a 1 : 2 stoichiometric ratio. The X-ray structure reveals formation of non-porous 3D material composed of parallel 2D-[Cu2Cl2S2](n) layers of Cl-bridged Cu-2(mu-Cl)(2) rhomboids assembled by EtS(CH2)(4)SEt ligands. A weak triplet emission (phi(e) < 0.0001) is observed in the 400-500 nm range with tau(e) of 0.93 (298 K) and 3.5 ns (77 K) as major components. CP2 is the only 2nd example of emissive thioether/CuCl-containing material and combined DFT/TDDFT computations suggest the presence of lowest energy M/XLCT excited states. Upon increasing the photon flux (i.e. laser power), a triplet-triplet annihilation (TTA) is induced with quenching time constants of 72 ps (k(Q) = 1.3 x 10(10) s(-1)) and 1.0 ns (k(Q) = 7.1 x 10(8) s(-1)) at 298 and 77 K, respectively, proceeding through an excitation energy migration operating via a Dexter process. Two distinct (I-o)(1/2) (I-o = laser power) dependences of the emission intensity are depicted, indicating saturation as the observed emission increases with the excitation flux. These findings differ from that previously reported isomorphous CP [Cu2Br2(mu-EtS(CH2)(4)SEt)(4)](n) (CP1), which exhibits no TTA behaviour at 77 K, and only one (laser power)(2) dependence at 298 K. The similar to 18-fold increase in k(Q) upon warming CP2 from 77 to 298 K indicates a temperature-aided TTA process. The significant difference between the presence (slower, CP2) and absence (CP1) of TTA at 77 K is explained by the larger unit cell contraction of the former upon cooling. This is noticeable by the larger change in inter-rhomboid CuMIDLINE HORIZONTAL ELLIPSISCu separation for CP2.
机译:通过使ETS(CH 2)(4)在1中用CuCl在1中与CuCl中的CuCl反应,制备定义为[Cu 2 Cl 2(4)组)(4)](n)(Cp2)的新配位聚合物(4))(4))(4))(4))(4))(4)) :2个化学计量的比例。 X射线结构揭示了由ETS(CH2)(4)组装的CL-桥接Cu-2(MU-CL)(2)菱形的平行2D-[Cu2Cl2S2](N)层组成的非多孔3D材料的形成设置配体。在400-500nm范围内观察到弱三态分泌(Phi(e)<0.0001),Tau(e)为0.93(298 k)和3.5ns(77 k)作为主要组分。 CP2是含有发光硫醚/ CuCl材料的唯一第二示例,并且组合DFT / TDDFT计算表明存在最低能量M / XLCT激发态。在增加光子通量(即激光功率)时,通过淬火时间常数为72ps(k(q)= 1.3×10(10)s(-1))和1.0ns()诱导三重胶囊 - 三胶囊湮灭(TTA)。 K(Q)= 7.1×10(8)秒(-1))分别在298和77 k下,通过通过糊精的过程进行激励能量迁移。描绘了发射强度的两个不同(I-O)(I-O =激光功率)的依赖性,表明饱和度随着观察到的发射随着激发通量而增加。这些发现与先前报告的同性晶Cp [Cu2Br2(MU-ETS(CH2)(4)设定)(4)](4))(N)(N)(CP1)不同,其在77 k下表现出没有TTA行为,并且只有一个(激光功率) (2)依赖于298 K.在将CP2从77至298k中加热CP2时,K(Q)的类似于18倍的增加表示温度辅助TTA工艺。通过前者在冷却时,通过前者的较大单位细胞收缩来解释TTA的存在(较慢,CP2)和不存在(CP1)之间的显着差异。对于CP2的rhomboid Cumidline水平椭圆分离的较大变化,这是明显的。

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