Efficiency improvement of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized two BSF layer in top and bottom cells

摘要

AbstractAn optimized BSF (Back Surface Field) is a key layer for a multi junction or single junction solar cell. In this work, two BSF layers with different thicknesses have been used in the upper and the lower cell and simulations have been done using the Silvaco ATLAS numerical modelling tools. It has been also found that in under the current matching condition with thinner upper BSF layers (160nm, 30nm) and a thicker lower BSF layer (1000nm, 30nm),JSCshort circuit current density andVOCopen circuit voltageand η conversion efficiency solar cell is improved. Major steps of simulation and its description and results have been compared to the previously published data in order to describe accuracy of the results. By selecting the best thickness of BSF layer, the efficiency can be increased up to 15% which happens because of increase in photo-generation rates and absorption in the solar cells. This article shows some characteristics of the proposed dualjunction solar cell such as photo-generation rate, short circuit current density, open circuit voltage and efficiency of the device relative to thickness of BSF layers and change in materials of tunneljunction. The results show that in case of increase in thickness of BSF, efficiency is also increased. The highest efficiency is obtained in thickness of 160nm, then the efficiency is decreased. The values of Jsc=23.36mA/cm2, Voc=2.43V, FF=86.76% and η=47.78% (1 sun) have also been obtained under AM1.5G illumination in the proposed structure which shows improvement in performance of the proposed device.]]>