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首页> 外文期刊>Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic >The effect of dissipation on defect modes in a one-dimensional photonic crystal
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The effect of dissipation on defect modes in a one-dimensional photonic crystal

机译:耗散对一维光子晶体中缺陷模式的影响

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Photonic crystals are artificial structures with periodic dielectric properties, which are divided into one-dimensional, two-dimensional, and three-dimensional crystals. In this study, electromagnetic wave propagation was studied in a one-dimensional photonic crystal. To understand wave propagation in a one-dimensional photonic crystal, which is a multi-layered system, reflection and transmission of TE and TM waves in a thin film, and finally in a multi-layer system was investigated by using the transfer matrix method. Transmission spectrum of symmetric and asymmetric ((Si / Si0(2))D-N (Si0(2) / Si)(N) and (Si / Si0(2))D-N (Si / Si0(2))(N))) crystal with defect layers (D) PbSe, Pb 1-xSnxTe and HgxCdxTe was depicted in frequency range of 4-7 THz and a defect mode was observed in band gap. Because these three materials had a complex refractive index, they rendered dissipation and reduced the amount of transmission in the system. Then, temperature dependence behavior of defect modes was studied. The results indicated that with increasing temperature, the height of defect mode decreases. As the temperature rose, decrement of defect mode height in photonic crystal with a Pb xSnxTe defect became much more than two others. Finally, Plots of electrical permittivity was plotted in terms of frequency and temperature for three materials. Only real part of electrical permittivity of Pb 1-xSnxTe remained constant with frequency changing. Also, in all cases, with increasing temperature, amplitude of real part of electrical permittivity decreased and imaginary part increased.
机译:光子晶体是具有周期性介电性质的人造结构,其分为一维,二维和三维晶体。在该研究中,在一维光子晶体中研究了电磁波传播。为了理解一维光子晶体中的波传播,这是一种多层系统,Te和Tm波的反射和传输在薄膜中,最后通过使用转移矩阵法研究了多层系统中。对称和不对称的透射光谱((Si / Si0(2))DN(Si0(2)/ Si)(N)和(Si / Si0(2))DN(Si / Si0(2))(n))))具有缺陷层(D)PBSE的晶体,Pb 1-xsnxte和Hgxcdxte在4-7星形的频率范围内描绘,并且在带隙中观察到缺陷模式。因为这三种材料具有复杂的折射率,所以它们呈现耗散并降低了系统中的传输量。然后,研究了缺陷模式的温度依赖性行为。结果表明,随着温度的增加,缺陷模式的高度降低。随着温度升高,光子晶体中的缺陷模式高度与PB XSnxte缺陷的递减变得多于其他两个。最后,在三种材料的频率和温度方面绘制了电介质的曲线图。只有PB 1-XSnxte的电介电常数的实际部分才能持续变频。而且,在所有情况下,随着温度的增加,电频率的实际部分的幅度下降,虚部增加。

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