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首页> 外文期刊>RSC Advances >Arsenene/Ca(OH)(2) van der Waals heterostructure: strain tunable electronic and photocatalytic properties
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Arsenene/Ca(OH)(2) van der Waals heterostructure: strain tunable electronic and photocatalytic properties

机译:阿森尼/ CA(OH)(2)范德瓦尔斯异质结构:应变可调电子和光催化性能

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摘要

Vertical stacking of two-dimensional materials has recently emerged as an exciting method for the design of novel electronic and optoelectronic devices. In this work, we investigate the structural, electronic, and potential photocatalytic properties of arsenene/Ca(OH)(2) van der Waals (vdW) heterostructures using first-principles calculations. It is found that all of the heterostructures are semiconductors with indirect band gaps and present similar electronic properties, almost irrespective of the stacking arrangement. However, among these heterostructures, the beta-stacking heterostructure is found to be the most stable and its band gap and band edge position can be tuned by biaxial strain. In particular, comparing the band edge positions with the redox potentials of water shows that the strained beta-stacking arsenene/Ca(OH)(2) vdW heterostructure is a potential photocatalyst for water splitting. Meanwhile, this heterostructure exhibits significantly improved photocatalytic properties under visible-light irradiation by the calculated optical absorption spectra. Our findings provide a detailed understanding of the physical properties of arsenene/Ca(OH)(2) vdW heterostructures and a new way to improve the design of photocatalysts for water splitting.
机译:最近垂直堆叠二维材料作为新型电子和光电器件设计的令人兴奋的方法。在这项工作中,我们调查(OH)(2)范德华(范德华)异质结构使用第一原理计算arsenene / Ca的结构,电子,和潜在的光催化性能。结果发现,所有异质结构是具有间接带间隙的半导体,并且存在类似的电子特性,几乎无论堆叠装置如何。然而,在这些异质结构中,发现β堆叠异质结构是最稳定的,并且其带隙和带边缘位置可以通过双轴应变调节。特别地,将带边缘位置与水的氧化还原电位进行比较表明应变β堆叠砷烯/ Ca(OH)(2)VDW异质结构是用于水分裂的潜在光催化剂。同时,通过计算的光学吸收光谱,该异质结构表现出明显改善的光催化性能下的可见光照射。我们的研究结果详细了解砷烯/ CA(OH)(2)VDW异质结构的物理性质和一种改善水分裂光催化剂设计的新方法。

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  • 来源
    《RSC Advances 》 |2017年第70期| 共7页
  • 作者单位

    Henan Polytech Univ Sch Phys &

    Elect Informat Engn Jiaozuo 454000 Peoples R China;

    Henan Polytech Univ Sch Phys &

    Elect Informat Engn Jiaozuo 454000 Peoples R China;

    Henan Polytech Univ Sch Phys &

    Elect Informat Engn Jiaozuo 454000 Peoples R China;

    Henan Polytech Univ Sch Phys &

    Elect Informat Engn Jiaozuo 454000 Peoples R China;

    Henan Polytech Univ Sch Phys &

    Elect Informat Engn Jiaozuo 454000 Peoples R China;

    Henan Polytech Univ Sch Phys &

    Elect Informat Engn Jiaozuo 454000 Peoples R China;

    Tongji Univ Sch Phys Sci &

    Engn MOE Key Lab Microstruct Mat Shanghai 200092 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学 ;
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