Atomic layer deposition of metal oxides for efficient perovskite single-junction and perovskite/silicon tandem solar cells

摘要

Aluminum-doped and undoped zinc oxide films were investigated as potential front and rear contacts of perovskite single and perovskite/silicon tandem solar cells. The films were prepared by atomic layer deposition (ALD) at low (<200 degrees C) substrate temperatures. The deposited films were crystalline with a single-phase wurtzite structure and exhibit excellent uniformity and low surface roughness which was confirmed by XRD and SEM measurements. Necessary material characterizations allow for realizing high-quality films with low resistivity and high optical transparency at the standard growth rate. Spectroscopic ellipsometry measurements were carried out to extract the complex refractive index of the deposited films, which were used to study the optics of perovskite single junction and perovskite/silicon tandem solar cells. The optics was investigated by three-dimensional finite-difference time-domain simulations. Guidelines are provided on how to realize perovskite solar cells exhibiting high short-circuit current densities. Furthermore, detailed guidelines are given for realizing perovskite/silicon tandem solar cells with short-circuit current densities exceeding 20 mA cm(-2) and potential energy conversion efficiencies beyond 31%.