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Room-temperature graphitization in a solid-phase reaction

机译:室温石墨化在固相反应中

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摘要

Graphitized carbon including graphene has recently become one of the most investigated advanced materials for future device applications, but a prerequisite for broadening its range of applications is to lower its growth temperature. Here we report a great decrease in graphitization temperature using the well-known catalyst Ni. Amorphous carbon films with Ni nanoparticles (NPs) were deposited, using a simple one-step magnetron sputtering method, onto microgrids and a SiO2/Si substrate for transmission electron microscopy (TEM) and Raman spectroscopy analyses, respectively. The amorphous carbon surroundings and locations between the Ni NPs started to become graphitized during the film deposition even at room temperature (RT) and 50 degrees C. The graphitization was confirmed by both high-resolution TEM (HR-TEM) and Raman 2D peak analyses. The increase in the relative amount of Ni in the amorphous carbon film led to the partial oxidation of the larger Ni NPs, resulting in less graphitization even at an elevated deposition temperature. Based on the detailed HR-TEM analyses, a decreased oxidation of NPs and enhanced solubility of carbon into Ni NPs were believed to be key for achieving low-temperature graphitization.
机译:包括石墨烯在内的石墨碳最近成为未来设备应用最多的调查先进材料之一,但扩大其应用范围的先决条件是降低其生长温度。在这里,我们使用众所周知的催化剂Ni报告石墨化温度的大大降低。使用简单的单步磁控溅射方法沉积具有Ni纳米颗粒(NPS)的非晶碳膜,分别使用简单的一步磁控溅射方法沉积在微电网和SiO 2 / Si衬底上,分别用于透射电子显微镜(TEM)和拉曼光谱分析。即使在室温(RT)和50℃下,Ni NP之间的非晶碳周围环境和Ni NP之间的位置也开始变得石墨化。通过高分辨率TEM(HR-TEM)和拉曼2D峰值分析证实了石墨化。非晶碳膜中Ni的相对量的增加导致较大的Ni NP的部分氧化,即使在升高的沉积温度下也导致石墨化较少。基于详细的HR-TEM分析,据信,对NPS的氧化和增强的碳溶解度降至Ni NPS,是实现低温石墨化的关键。

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  • 来源
    《RSC Advances》 |2020年第2期|共9页
  • 作者单位

    Nagoya Inst Technol Grad Sch Engn Dept Phys Sci &

    Engn Showa Ku Gokiso Cho Nagoya Aichi 4668555 Japan;

    Nagoya Inst Technol Grad Sch Engn Dept Phys Sci &

    Engn Showa Ku Gokiso Cho Nagoya Aichi 4668555 Japan;

    Nagoya Inst Technol Grad Sch Engn Dept Phys Sci &

    Engn Showa Ku Gokiso Cho Nagoya Aichi 4668555 Japan;

    Nagoya Inst Technol Grad Sch Engn Dept Phys Sci &

    Engn Showa Ku Gokiso Cho Nagoya Aichi 4668555 Japan;

    Nagoya Inst Technol Grad Sch Engn Dept Phys Sci &

    Engn Showa Ku Gokiso Cho Nagoya Aichi 4668555 Japan;

    Univ Teknol Malaysia Fac Mech Engn Dept Mat Skudai 81310 Johor Malaysia;

    Necmettin Erbakan Univ Fac Engn &

    Architecture Dept Met &

    Mat Engn Konya Turkey;

    Nagoya Inst Technol Grad Sch Engn Dept Phys Sci &

    Engn Showa Ku Gokiso Cho Nagoya Aichi 4668555 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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