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Field-driven single domain wall motion in ferromagnetic nanowires

机译:铁磁纳米线中的现场驱动的单畴壁运动

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摘要

We present a Lorentz microscopy study of polycrystalline permalloy 2D nanostructures with a thickness of 20 nm. Each structure was designed as a single domain wall trap. The trap comprises two horizontal nanowires with an in-plane dimension of 200 x 1000 nm(2), and three tilted pads with different shapes. These structures allow us to create head-to-head domain walls, and these created walls can propagate in the structures by an external magnetic field. These designed traps were simulated using the micro-magnetic OOMMF simulation software. Those nanostructures were also patterned using electron beam lithography and focussed-ion beam techniques. This aims to determine the geometric parameters required to propagate a single magnetic domain wall in these structures reproducibly. Among the studied structures with one and two field directions, we found that the motion of a domain wall can be reproducibly driven by two alternative field directions in a trap which consists of the two horizontal nanowires and three 90 degrees-tilted ones. We investigated systematically the viability of both single field and sequential switching of two field directions. Lorentz microscopy and micro-magnetic simulation results indicate that the propagation of a domain wall is strongly affected by the precise shape of the corner sections linking the trap elements, and the angles of the horizontal nanowires and tilted pads. Domain wall pinning and transformation of wall chirality are strongly correlated to the trap geometries. Our results are vital to design an optimal trap which supports a reproducible domain wall motion. This might also support a greater understanding of domain wall creation and propagation in magnetic nanowires which are of interest for concepts of high-density and ultrafast nonvolatile data storage devices, including racetrack memory and magnetic logic gates.
机译:我们介绍了一种厚度为20nm的多晶Permoloy 2d纳米结构的Lorentz显微镜研究。每个结构都被设计为单个域壁阱。陷阱包括两个水平纳米线,其面内尺寸为200×1000nm(2),以及具有不同形状的三个倾斜垫。这些结构允许我们创建头部到头部墙壁,并且这些创建的墙壁可以通过外部磁场在结构中传播。使用微磁OOMMF仿真软件模拟这些设计的陷阱。还使用电子束光刻和聚焦离子束技术图案化的那些纳米结构。这旨在确定可重复地在这些结构中传播单个磁畴壁所需的几何参数。在具有一个和两个场方向的研究中,我们发现畴壁的运动可以通过在疏水阀中的两个替代场方向上可再现地驱动,该陷阱由两个水平纳米线和三个90度倾斜的陷阱组成。我们系统地调查了单场的可行性和两个场方向的顺序切换。 Lorentz显微镜和微磁性仿真结果表明,畴壁的传播受连接捕集元件的拐角部分的精确形状,以及水平纳米线和倾斜垫的角度。域壁固定和墙上手平性的转换与陷阱几何形状强烈相关。我们的结果对于设计一种高度陷阱至关重要,支持可重复的域壁运动。这也可能支持对磁性纳米线的域壁创建和传播的更大了解,这些纳米线对高密度和超快非易失性数据存储设备的概念感兴趣,包括跑道存储器和磁逻辑门。

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  • 来源
    《RSC Advances》 |2018年第26期|共13页
  • 作者单位

    Ton Duc Thang Univ Sustainable Dev Civil Engn Res Grp Fac Civil Engn 19 Nguyen Huu Tho St Dist 7 Ho Chi Minh City 700000 Vietnam;

    Ton Duc Thang Univ Sustainable Dev Civil Engn Res Grp Fac Civil Engn 19 Nguyen Huu Tho St Dist 7 Ho Chi Minh City 700000 Vietnam;

    Da Nang Univ Sci &

    Technol Adv Program Elect &

    Commun Engn 54 Nguyen Luong Bang Da Nang Vietnam;

    Ho Chi Minh City Univ Technol &

    Educ Fac Sci Appl Dept Mat Technol 1 Vo Van Ngan Ho Chi Minh City 700000 Vietnam;

    Univ Manchester Sch Mat Electron Microscopy Ctr Manchester M13 9PL Lancs England;

    Ton Duc Thang Univ Sustainable Dev Civil Engn Res Grp Fac Civil Engn 19 Nguyen Huu Tho St Dist 7 Ho Chi Minh City 700000 Vietnam;

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  • 正文语种 eng
  • 中图分类 化学;
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