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Hexagonal hollow silica plate particles with high transmittance under ultraviolet-visible light

机译:紫外线可见光下具有高透射率的六边形中空二氧化硅颗粒

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摘要

Creating hollow structures is one strategy for tuning the optical properties of materials. The current study aimed to increase the optical transmittance of silica (SiO2) particles. To this end, hexagonal-shaped hollow silica plate (HHSP) particles were synthesized from tetraethyl orthosilicate (TEOS) and zinc oxide (ZnO) template particles, using a microwave-assisted hydrothermal method. The size and shell thickness of the HHSP particles could be adjusted by using different TEOS/ZnO molar ratios and different ZnO template sizes, respectively. The optical transmittance of the HHSP particles depended on the shell thickness and particle size. The highest transmittance was 99% in the ultraviolet and visible region (300-800 nm) and was exhibited by HHSP particles with the thinnest shell thickness of 6.3 nm. This transmittance was higher than that exhibited by spherical hollow silica particles with a similar shell thickness. This suggested morphology-dependent transmittance for the semiconducting material. These preliminary results illustrate the promising features of the HHSP particles and suggest their potential application in future transparent devices.
机译:创建空心结构是调整材料光学性质的一种策略。目前的研究旨在增加二氧化硅(SiO 2)颗粒的光学透射率。为此,六角形的中空硅石板(HHSP)颗粒从原硅酸四乙酯(TEOS)和氧化锌(ZnO)粒子模板合成,使用微波辅助的水热法。通过使用不同的TEOS / ZnO摩尔比和不同的ZnO模板尺寸,可以通过使用不同的TEOS / ZnO摩尔比和不同的ZnO模板尺寸来调节HHSP颗粒的尺寸和壳厚度。 HHSP颗粒的光学透射率取决于壳体厚度和粒度。紫外线和可见区域(300-800nm)中最高透射率为99%,并通过HHSP颗粒呈现,具有6.3nm的最薄壳厚度。该透射率高于具有相似壳厚度的球形中空二氧化硅颗粒所呈现的。这提出了半导体材料的形态依赖性透射率。这些初步结果说明了HHSP粒子的有希望的特征,并建议他们在未来的透明设备中的潜在应用。

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  • 来源
    《RSC Advances》 |2018年第46期|共6页
  • 作者单位

    Inst Teknol Sepuluh Nopember Fac Ind Technol Dept Chem Engn Kampus ITS Sukolilo Surabaya 60111 Indonesia;

    Hiroshima Univ Grad Sch Engn Dept Chem Engn 1-4-1 Kagamiyama Higashihiroshima Hiroshima 7398527 Japan;

    Inst Teknol Sepuluh Nopember Fac Ind Technol Dept Chem Engn Kampus ITS Sukolilo Surabaya 60111 Indonesia;

    Inst Teknol Sepuluh Nopember Fac Ind Technol Dept Chem Engn Kampus ITS Sukolilo Surabaya 60111 Indonesia;

    Hiroshima Univ Grad Sch Engn Dept Chem Engn 1-4-1 Kagamiyama Higashihiroshima Hiroshima 7398527 Japan;

    Hiroshima Univ Grad Sch Engn Dept Chem Engn 1-4-1 Kagamiyama Higashihiroshima Hiroshima 7398527 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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