...
首页> 外文期刊>RSC Advances >Enhanced photoresponse of a high-performance self-powered UV photodetector based on ZnO nanorods and a novel electrolyte by the piezo-phototronic effect
【24h】

Enhanced photoresponse of a high-performance self-powered UV photodetector based on ZnO nanorods and a novel electrolyte by the piezo-phototronic effect

机译:基于ZnO纳米棒的高性能自动紫外线光电探测器和压电式电解质增强光响应

获取原文
获取原文并翻译 | 示例

摘要

A flexible self-powered ultraviolet (UV) photodetector based on ZnO nanorods (NRs) and a novel iodine-free quasi solid-state electrolyte was fabricated. The obtained device has a fast and high response to UV light illumination at zero bias and also shows long-term stability. The responsivity is 50.5 mA W-1 and the response time is less than 0.2 s. Strain-induced piezo-phototronic potential within wurtzite-structured ZnO can optimize the performance of corresponding optoelectronic devices since it could effectively tune the charge carriers' separation and transport. The photoresponse performances of the photodetector under different upward angles (tensile strain) and downward angles (compressive strain) at 0 V bias were studied in detail. A 163% change of responsivity was obtained when the downward angle reached 60 degrees. The enhancement could be interpreted by the piezo-phototronic effect. The piezoelectric potential (piezopotential) at the ZnO NRs/electrolyte interface can expand the built-in field, and as a result, it is easier for charge carriers to separate and transport.
机译:制造基于ZnO纳米棒(NRS)的柔性自供电紫外(UV)光电探测器和新型无碘的准四固态电解质。所得装置对零偏压的UV光照射具有快速且高响应,并且还示出了长期稳定性。响应度为50.5 mA W-1,响应时间小于0.2秒。紫立岩结构结构ZnO内的应变引起的压电式电位可以优化相应的光电器件的性能,因为它可以有效地调整电荷载体的分离和运输。详细地研究了在0V偏压下在不同向上角度(拉伸应变)和向下角度(压缩菌株)下光探测器的光响应性能。当向下角度达到60度时,获得了163%的响应变化。增强可以通过压电反应效应来解释。 Zno NRS /电解质界面处的压电电位(压电功能)可以扩展内置领域,因此,电荷载波更容易分离和运输。

著录项

  • 来源
    《RSC Advances 》 |2018年第58期| 共6页
  • 作者单位

    Zhejiang Univ Sch Mat Sci &

    Engn Cyrus Tang Ctr Sensor Mat &

    Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn Cyrus Tang Ctr Sensor Mat &

    Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn Cyrus Tang Ctr Sensor Mat &

    Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn Cyrus Tang Ctr Sensor Mat &

    Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn Cyrus Tang Ctr Sensor Mat &

    Applicat State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Shenzhen Univ Coll Optoelect Engn Shenzhen Key Lab Laser Engn Shenzhen 518060 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学 ;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号