机译:通过接口工程调制Taox基电阻装置的非线性电阻切换行为
Peking Univ Inst Microelect Beijing 100871 Peoples R China;
Peking Univ Inst Microelect Beijing 100871 Peoples R China;
Peking Univ Inst Microelect Beijing 100871 Peoples R China;
Peking Univ Inst Microelect Beijing 100871 Peoples R China;
Peking Univ Inst Microelect Beijing 100871 Peoples R China;
Peking Univ Inst Microelect Beijing 100871 Peoples R China;
Peking Univ Inst Microelect Beijing 100871 Peoples R China;
Peking Univ Inst Microelect Beijing 100871 Peoples R China;
interface engineering; nonvolatile memory; resistive random access memory (RRAM); resistive switching; nonlinearity; tantalum oxide;
机译:通过接口工程调制Taox基电阻装置的非线性电阻切换行为
机译:在泰诺基电阻切换装置的电铸期间,在锡/瓦斯接口上交换离子/ Taox界面
机译:界面层工程对基于ZrO 2 sub>的电阻开关器件的电阻开关特性的影响
机译:用于非冯·诺依曼计算应用的基于TAO
机译:金属/ pr钙锰矿界面中的电场感应电阻切换:未来非易失性存储设备的模型。
机译:通过底部电极的钛注入在BiFeO3薄膜开关中进行工程界面型电阻开关
机译:用n型掺杂控制解决方案处理的基于HFOX的电阻切换存储器件的电阻切换行为