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Growth and electronic structure of 2D hexagonal nanosheets on a corrugated rectangular substrate

机译:瓦楞矩形基材上的2D六边形纳米片的生长和电子结构

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Graphene and h-BN are grown by chemical vapor deposition in ultra high vacuum conditions on the Pt(110) surface. Scanning tunneling microscopy measurements and low-energy electron diffraction data indicate that graphene forms a variety of differently oriented incommensurate domains although with a strong preference to align its [11 (2) over bar0] direction with the [00 (1) over bar] direction of Pt. Meanwhile, h-BN exhibits a c(8 x 10) commensurate superstructure, which presents a high level of defectivity that implies local variation of the periodicity (i.e. mixed c(8 x 10) and c(8 x 12) patches) and the introduction of local defects. The combination of advanced photoemission spectroscopy data (angle-resolved photoemission spectroscopy from the valence band) and ab initio calculations indicates that both 2D materials interact weakly with the substrate: graphene exhibits neutral doping and is morphologically flat, even if it nucleates on the relatively highly corrugated rectangular (110) surface. In the case of h-BN, the interaction is slightly stronger and is characterized by a small electron transfer from surface Pt atoms to nitrogen atoms. The (110) termination of Pt is therefore a quite interesting surface for the growth of 2D materials because given its low symmetry, it may favor the growth of selectively oriented domains but does not affect their pristine electronic properties.
机译:石墨烯和H-BN在PT(110)表面上的超高真空条件下通过化学气相沉积生长。扫描隧穿显微镜测量和低能量电子衍射数据表明石墨烯形成各种不同取向的中非晶域,尽管具有强烈的偏好,以使其[11(2)上方的条形为rel and rel]方向对齐[00(1)方向Pt。同时,H-BN展示AC(8×10)的相称式上层建筑,其呈现高水平的缺陷,暗示周期性的局部变化(即混合C(8×10)和C(8 x 12)斑块)和引入当地缺陷。先进的光学激光谱数据(来自价带的角度分辨的光曝光光谱)和AB初始计算表明,两个2D材料与基材弱相互作用:石墨烯表现出中性掺杂,也是形态平坦的,即使它在相对高度上成核波纹矩形(110)表面。在H-BN的情况下,相互作用稍微较强,其特征在于从表面Pt原子到氮原子的小电子转移。因此,PT的(110)终止是一种相当有趣的表面,用于2D材料的生长,因为鉴于其低对称性,它可能有利于选择性取向域的生长,但不影响其原始电子性质。

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