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首页> 外文期刊>Nanotechnology >Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches
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Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches

机译:谐振辅助跳转电压降低静电纳米云的无需NEM开关

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摘要

Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge(0.9)1Sn(0.09) alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.
机译:基于型纳米束的机电开关已经显示了通用新型应用的承诺,例如低功率器件。 然而,由于高跳跃电压导致的可靠性差,它们的广泛使用受到限制。 本文通过在接通过程中诱导有源元件中的机械振荡来报告一种降低跳跃电压的新方法,减少了超过三次的跳跃电压。 GE(0.09)1SN(0.09)合金和Bi2Se3基于纳米线的纳米机电开关原位构建,以证明所提出的方法的操作原理和优点。

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