Low group delay variation 3-10 GHz 65 nm CMOS stacked power amplifier with 18.1 dBm peak 1 dB compression output power

摘要

A 3-10 GHz stacked power amplifier (PA) with low group delay variation and 18.1 dBm peak 1 dB compression output power (P-1dB) in 65 nm CMOS bulk technology is presented. It is intended for ultra-wideband or multiband telecommunication, sensing, and instrumentation systems operating in the 3-10 GHz frequency range situated in the S, C, and X bands. Its design, based on stacked transistors allowing a supply voltage as high as 4 V to achieve a high 1 dB compression output power, is detailed. In the 3-10 GHz band, the proposed PA provides measured gain, P-1dB, and maximum power added efficiency (PAE(max)) of 12.65 +/- 1.25 dB, 16 +/- 2.1 dBm, and 20.15 +/- 7.55%, respectively. In addition, in its frequency range of operation, this PA achieves an excellent measured group delay variation of +/- 21.55 ps. To the authors' knowledge, this wideband PA offers the lowest group delay variation in this frequency range of operation.