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Neutron damage induced in cardiovascular implantable electronic devices from a clinical 18 MV MV photon beam: A Monte Carlo study

机译:临床18 MV MV光子梁中心血管植入电子设备中的中子损伤:蒙特卡罗研究

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Purpose The purpose of this study was to quantify the relative neutron damage induced in CIED s from clinical 18 MV photon beams for varying field sizes, depths, and off axis distances. Methods and Materials Damage was assessed using silicon damage response functions and ICRP neutron dose conversion factors in MCNPX . Particular attention was devoted to the modelling of the Varian 2100C/D linear accelerator to ensure accurate contamination neutron spectra. Neutron dose, fluence and relative damage to CIED s was calculated. Results CIED damage from neutrons is related to the neutron dose rather than the neutron fluence. As field size increases, the region of high damage probability extends to a greater distance beyond the edge of the field than with smaller fields. At a distance greater than 50 cm or from the central axis or a depth deeper than 10 cm, the probability of damage is less than 10% of the central axis damage probability for all field sizes. Conclusions Clinically, increasing the depth or the distance from the central axis to the CIED will reduce the probability of damage from neutrons. Care must be taken when treating large fields as the overall probability of damage increase as does the distance the higher probability of damage extends beyond the field edge.
机译:目的本研究的目的是通过临床18 MV光子束量化CIED S引起的相对中子损伤,以改变场尺寸,深度和轴线距离。使用硅损伤响应函数和MCNPX中的ICRP中子剂量转化因子评估方法和材料损坏。特别注意Varian 2100C / D线性加速器的建模,以确保精确的污染中子谱。计算中子剂量,流量和相对损伤的CIED S。结果中子的损伤与中子剂量相关,而不是中子流量。作为场尺寸的增加,高损伤概率的区域延伸到超出场的边缘的距离而不是较小的字段。在大于50厘米或距中心轴或深度深于10厘米的距离处,损坏的概率小于所有场尺寸的中心轴损伤概率的10%。结论在临床上,增加了距离中心轴到CIE的深度或距离将降低中子损坏的可能性。在处理大型领域时必须小心,因为距离增加的损坏的总体概率随着距离的较高损坏概率延伸超过田间边缘。

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