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Controlled Crystal Growth of Indium Selenide, In2Se3, and the Crystal Structures of alpha-In2Se3

机译:硒化铟,In2Se3和α-In2Se3的晶体结构的受控晶体生长

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摘要

In2Se3 has been known for over 100 years and recently attracted interest as a promising candidate for a variety of applications, such as solar cells, photodiodes, and phase-change memories. Despite the broad concern for possible uses, its polymorphism and structure are poorly characterized. By combining X-ray diffraction, transmission electron microscopy, and quantum-chemical calculations, we present here the crystal structures of two layered room-temperature polytypes: 3R and 2H In2Se3. Both polymorphs are stacking variants of the same Se-In-Se-In-Se layers comprising two coordination environments for the In atoms, one tetrahedral and one octahedral. By using chemical-bonding analysis, we look at the different In positions in alpha-In2Se3 and compare them to those in the metastable beta-phase.
机译:In2Se3已知超过100年,最近吸引了兴趣作为各种应用的有希望的候选者,例如太阳能电池,光电二极管和相变存储器。 尽管可能使用的广泛关注,但其多态性和结构的特征很差。 通过组合X射线衍射,透射电子显微镜和量子化学计算,在此提供两个层状室温多型的晶体结构:3R和2H IN2SE3。 两种多晶型物是堆叠相同SE-IN-SE层的变体,其包括用于IN原子的两个配位环境,一种四面体和一个八面体。 通过使用化学键合分析,我们在α-In2Se3中看出不同的位置,并将它们与亚稳态β相中的比较。

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