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首页> 外文期刊>Inorganic Chemistry: A Research Journal that Includes Bioinorganic, Catalytic, Organometallic, Solid-State, and Synthetic Chemistry and Reaction Dynamics >Defect-Induced Enhancement Emission Intensity of Ca-4.85(BO3)(3)F(C4.85BF):0.15Bi(3+) by Introducing Cation (Na+, Sr2+, Ba2+) or Anion (Cl-)
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Defect-Induced Enhancement Emission Intensity of Ca-4.85(BO3)(3)F(C4.85BF):0.15Bi(3+) by Introducing Cation (Na+, Sr2+, Ba2+) or Anion (Cl-)

机译:通过引入阳离子(Na +,Sr2 +,Ba2 +)或阴离子(CL-),Ca-4.85(Bo3)(3)F(3)F(3)F(3)°F(3)(3 +)(CL-),缺陷诱导的增强发射强度(C4.85BF):0.15Bi(3+)

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Generally, the emission intensity of phosphors can be enhanced by introducing a proper number of defects. To enhance the emission intensity of Ca-4.85(BO3)(3)F(C4.85BF):0.15Bi(3+), more Frenkel defects were introduced by Na+, Sr2+, and Ba2+. It is found that the number of Frenkel defects is related to volume and covalence of the crystal, in which the covalence has a greater effect than the volume. Furthermore, the larger the volume of the crystal is, the stronger the covalence of the crystal is, the more Frenkel defects will be produced. The volume of Ca4.85-xSrx(BO3)(3)F(C4.85-xSrx BF):0.15Bi(3+) is larger than that of Ca4.85-xNax(BO3)(3)F(C4.85-xNax BF):0.15Bi(3+); however, the covalence of Na+ is similar to that of Sr2+, which leads to the same trap depth (E-alpha) and defect density (mu(g)) in the quenching concentration. The results also confirmed that the number of Frenkel defects is mainly influenced by the covalence of crystal. Furthermore, crystal distortion also affects the number of Frenkel defects. C4.85-xSrxBF:0.15Bi(3+) and C4.85-xNaxBF:0.15Bi(3+) have the same distortion at quenching concentration, which results in the same emission intensity in the quenching concentration. Ca4.85-xBax(Bo(3))(3)F (C4.85-xBaxBF):0.15Bi(3+) has a larger volume and stronger covalence; meanwhile, it has deeper trap depth (E-alpha) and larger defect density mu(g)) at the quenching concentration, comparing with C4.85-xSrxBF:0.15Bi(3+) and C4.85-xNaxBF:0.15Bi(3+). However, the distortion of C4.85-xBaxBF:0.1.5Bi(3+) is in agreement with C4.85-xNaxBF:0.15Bi(3+) and C4.85-xSrxBF:0.15Bi(3+), which leads to the emission intensity of C4.85-xBaxBF:0.1.5Bi(3+) basically the same as that of C4.85-xNaxBF:0.15Bi(3+) and C4.85-xSrxBF:0.15Bi(3+) in quenching concentration. And the different rates of distortion result in the different quenching concentrations of C4.85-xNaxBF:0.15Bi(3+), C4.85-xSrxBF:0.15Bi(3+), and C4.85-xBaxBF: 0.15Bi(3+). Moreover, for Ca4.85-xMgx(BO3)(3)F(C4.85-rMgxBF)
机译:通常,通过引入适当的缺陷,可以增强磷光体的发光强度。为了增强Ca-4.85(Bo3)(3)F(C4.85BF):0.15bi(3+)的发射强度,通过Na +,Sr2 +和Ba2 +引入更多的弗雷克尔缺陷。结果发现,Frenkel缺陷的数量与晶体的体积和共价相关,其中共价值具有比体积更大的效果。此外,晶体的体积越大,晶体的共价越强,将产生越野缺陷。 CA4.85-XSRX(BO3)(3)F(C4.85-XSRX BF)的体积:0.15bi(3+)大于CA4.85-XNAX(BO3)(3)F(C4。 85-xax bf):0.15bi(3+);然而,Na +的亚+类似于SR2 +的核,这导致淬火浓度中相同的捕集深度(E-α)和缺陷密度(MU(g))。结果还证实,Frenkel缺陷的数量主要受晶体的共价影响。此外,晶体畸变也会影响Frenkel缺陷的数量。 C4.85-XSRXBF:0.15Bi(3+)和C4.85-XNaxBF:0.15bi(3+)在淬火浓度下具有相同的变形,这导致淬火浓度的发光强度相同。 Ca4.85-xbax(Bo(3))(3)F(C4.85-XbaxBF):0.15bi(3+)具有较大的体积和更强的共价;同时,在淬火浓度下,它具有更深的捕集深度(E-α)和较大的缺陷密度mu(g)),与C4.85-xsrxbf:0.15bi(3+)和c4.85-xaxbf:0.15bi( 3+)。然而,C4.85-XbaxBF:0.1.5bi(3+)的畸变与C4.85-XNAXBF:0.15bi(3+)和C4.85-xsrxbf:0.15bi(3+)达成协议,这引领到C4.85-XbaxBF的发射强度:0.1.5bi(3+)基本上与c4.85-xaxbf:0.15bi(3 +)和c4.85-xsrxbf:0.15bi(3+)相同猝灭浓度。而不同的畸变率导致C4.85-XNAXBF:0.15Bi(3+),C4.85-XSRXBF:0.15Bi(3+)和C4.85-XbaxBF:0.15Bi(3 +)。此外,对于CA4.85-XMGX(BO3)(3)F(C4.85-RMGXBF)

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    Hebei Univ Coll Phys Sci &

    Technol Hebei Key Lab Opt Elect Informat &

    Mat Natl Local Joint Engn Lab New Energy Photoelect D Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci &

    Technol Hebei Key Lab Opt Elect Informat &

    Mat Natl Local Joint Engn Lab New Energy Photoelect D Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci &

    Technol Hebei Key Lab Opt Elect Informat &

    Mat Natl Local Joint Engn Lab New Energy Photoelect D Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci &

    Technol Hebei Key Lab Opt Elect Informat &

    Mat Natl Local Joint Engn Lab New Energy Photoelect D Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci &

    Technol Hebei Key Lab Opt Elect Informat &

    Mat Natl Local Joint Engn Lab New Energy Photoelect D Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci &

    Technol Hebei Key Lab Opt Elect Informat &

    Mat Natl Local Joint Engn Lab New Energy Photoelect D Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci &

    Technol Hebei Key Lab Opt Elect Informat &

    Mat Natl Local Joint Engn Lab New Energy Photoelect D Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci &

    Technol Hebei Key Lab Opt Elect Informat &

    Mat Natl Local Joint Engn Lab New Energy Photoelect D Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci &

    Technol Hebei Key Lab Opt Elect Informat &

    Mat Natl Local Joint Engn Lab New Energy Photoelect D Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci &

    Technol Hebei Key Lab Opt Elect Informat &

    Mat Natl Local Joint Engn Lab New Energy Photoelect D Baoding 071002 Peoples R China;

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