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首页> 外文期刊>International Journal of Quantum Chemistry >Theoretical study of positron scattering by group 14 tetra hydrides: A quantum mechanical approach
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Theoretical study of positron scattering by group 14 tetra hydrides: A quantum mechanical approach

机译:第14组Tetra Hydroder Corirron散射的理论研究:量子力学方法

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摘要

> The present work provides a comprehensive set of positron impact scattering cross sections for group 14 tetrahydrides, namely, SiH 4 , GeH 4 , SnH 4 , and PbH 4 . The well‐established spherical complex optical potential and complex scattering potential‐ionization contribution methods are modified to incorporate positron scattering in the present work to calculate various cross sections. The positronium formation channel is adequately included through an improved inelastic threshold. The energy range chosen for the direct ionization cross section is from the respective ionization potential ( I ) of the molecule to 5 keV. Likewise, positronium formation and total ionization cross sections are reported from the positronium formation threshold to 300 eV and 5 keV, respectively, and the total cross section is computed for an extensive energy range of 1 eV to 5 keV. The positron impact total cross section for stannane molecule is computed for the first time. A characteristic valley is observed in the total cross sections with minima close to the positronium formation threshold. Further increase of cross section signifies the opening of inelastic channels especially positronium formation. In general, a reasonable agreement is found between the present results and other comparisons, wherever available. Furthermore, this is the first report of the inelastic cross sections (direct ionization, positronium formation, and total ionization) for the present set of targets.
机译:

本作本作一套全面的正电子撞击散射横截面,即第14类四水,即 SIH 4 , geh 4 , snh 4 ,和 pbh 4 。修改了良好的球形复合光学电位和复杂的散射电离贡献方法以在本作工作中加入正电子散射以计算各种横截面。通过改善的非弹性阈值充分地包括正极形成通道。选择用于直接电离横截面的能量范围是分子的相应电离电位(Ⅰ)至5keV。同样,从正数形成阈值分别从正数形成和总电离横截面报告到300eV和5keV,并且总横截面被计算为1eV至5keV的广泛能量范围。正电子撞击席烷分子的总横截面首次计算。在靠近正电子形成阈值的最小横截面中观察到特征谷。横截面的进一步增加表示非弹性通道的开口尤其是正向形成。一般而言,在目前的结果和其他比较之间存在合理的协议,无论使用。此外,这是本发明靶标的非弹性横截面(直接电离,正电子形成和总电离)的第一报告。

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