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首页> 外文期刊>International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics >e-e recollision dynamics of nonsequential double ionization with mid-infrared laser field
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e-e recollision dynamics of nonsequential double ionization with mid-infrared laser field

机译:中红外激光场的非顺序双电离的E-E回忆动力学

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We have investigated the recollision dynamics of correlated electron from nonsequential double ionization (NSDI) with 3200 nm laser fields at a wide range of intensities using a full-dimensional classical ensemble method. The numerical results show that for the mid-infrared laser fields, the double ionization probability versus laser peak intensity still displays a much clear "traditional" knee structure representing NSDI. At low intensity, the electron momentum correlated spectrum along the laser polarization direction shows a V-shaped structure; whereas at high intensity, the spectrum exhibits a clearly cross-shaped structure. We demonstrate that both the V-shaped structure and the cross-shaped structure are the results of extremely asymmetric energy sharing of the two electrons at recollision. Moreover, the most prominent contribution to NSDI is from the second-returning trajectory and the first-returning trajectory is significantly suppressed. What's more, the mechanism of NSDI is from recollision impact ionization (RII) channel as well as recollision-excitation-with-subsequent-ionization (REST) channel. We find that at low intensity, only the RII channel contributes to V-shaped structure; whereas at high intensity, both the RII and RESI channels have comparable contribution to the cross-shaped structure. Further, we diagnose the recolliding electron and the bound electron separately by tracing the classical trajectories.
机译:我们研究了使用全维古集合方法在广泛的强度下用3200nm激光场的来自非顺序双电离(NSDI)相关电子的回忆动力学。数值结果表明,对于中红外激光场,双电离概率与激光峰强度仍然显示出代表NSDI的明确“传统”膝关节结构。在低强度下,沿激光偏振方向的电子动量相关光谱表示V形结构;虽然高强度,光谱表现出明显的横形结构。我们证明V形结构和交叉形结构都是两个电子在回忆中的极其不对称能量共享的结果。此外,对NSDI最突出的贡献来自第二返回轨迹,并且显着抑制了第一返回轨迹。更重要的是,NSDI的机制来自倒闭冲击电离(RII)通道以及再次激发 - 随后的电离(REST)通道。我们发现,在低强度下,只有RII通道有助于V形结构;虽然高强度,RII和RESI通道都对交叉结构具有相当的贡献。此外,我们通过追踪经典轨迹分别诊断读取电子和结合电子。

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