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首页> 外文期刊>Journal of Physics. Condensed Matter >Electron transport and Goos-H?nchen shift in graphene with electric and magnetic barriers: Optical analogy and band structure
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Electron transport and Goos-H?nchen shift in graphene with electric and magnetic barriers: Optical analogy and band structure

机译:具有电和磁势垒的石墨烯中的电子传输和Goos-H?nchen位移:光学类比和能带结构

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Transport of massless Dirac fermions in graphene monolayers is analysed in the presence of a combination of singular magnetic barriers and applied electrostatic potential. Extending a recently proposed (Ghosh and Sharma 2009 J. Phys.: Condens. Matter 21 292204) analogy between the transmission of light through a medium with modulated refractive index and electron transmission in graphene through singular magnetic barriers to the present case, we find the addition of a scalar potential profoundly changes the transmission. We calculate the quantum version of the Goos-H?nchen shift that the electron wave suffers upon being totally reflected by such barriers. The combined electric and magnetic barriers substantially modify the band structure near the Dirac point. This affects transport near the Dirac point significantly and has important consequences for graphene-based electronics.
机译:在奇异的磁性势垒和施加的静电势共同存在下,分析了无质量的狄拉克费米子在石墨烯单层中的传输。将最近提出的(Ghosh and Sharma 2009 J. Phys .: Condens.Matter 21 292204)类比延伸到目前情况,将光通过具有调制折射率的介质的传输与石墨烯中电子通过奇异的磁性势垒进行传输之间的类比。标量势的添加会深刻改变传输。我们计算了电子波被此类势垒完全反射后遭受的Goos-H?nchen位移的量子形式。结合的电和磁势垒基本上改变了狄拉克点附近的能带结构。这极大地影响了狄拉克点附近的传输,并对基于石墨烯的电子产品产生重要影响。

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