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首页> 外文期刊>Journal of Physics. Condensed Matter >Atomic structure and adhesion of the Nb(001)/alpha-Nb5Si3(001) interface: a first-principles study
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Atomic structure and adhesion of the Nb(001)/alpha-Nb5Si3(001) interface: a first-principles study

机译:Nb(001)/ alpha-Nb5Si3(001)界面的原子结构和附着力:一项第一性原理研究

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摘要

The density functional calculations have been performed to study the Nb(001) and alpha-Nb5Si3(001) surfaces as well as the interface properties of Nb(001)/alpha-Nb5Si3(001). The surface energy of the Nb(001) surface is about 2.25 J m(-2). The calculated cleavage energies of bulk Nb5Si3 are 5.103 J m(-2) and 5.787 J m(-2) along (001) planes with the breaking of Nb-Si and Nb-NbSi bonds, respectively. For the Nb(001)/alpha-Nb5Si3(001) models, the Nb atoms in the interface region initially belonging to body centered cubic metal Nb are twisted to the position of the Nb atom layer in Nb5Si3 and the interlayer distance is similar to that of bulk Nb5Si3 after being fully relaxed. The ideal work of adhesion of the Nb(001)/Nb5Si3(001) interface is calculated and compared to those of bulk Nb and Nb5Si3. The results show that the bulk Nb5Si3 has the largest work of adhesion, the bcc Nb ranks second and the interface ranks last. Moreover, the Nb-Si bond is weaker than Nb-NbSi and Nb-Nb bonds in the interface, which means that the Nb-Si bond in the interface is the most possible site for the micro-crack generation when the stress is applied quasi-statically along the [001] direction. The densities of states, Mulliken population and overlap population of the Nb(001)/alpha-Nb5Si3(001) interface are also analyzed.
机译:进行密度函数计算以研究Nb(001)和alpha-Nb5Si3(001)表面以及Nb(001)/ alpha-Nb5Si3(001)的界面性质。 Nb(001)表面的表面能约为2.25 J m(-2)。沿着(001)平面,随着Nb-Si和Nb-NbSi键的断裂,本体Nb5Si3的计算裂解能分别为5.103 J m(-2)和5.787 J m(-2)。对于Nb(001)/ alpha-Nb5Si3(001)模型,最初属于体心立方金属Nb的界面区域中的Nb原子扭曲到Nb5Si3中Nb原子层的位置,并且层间距离类似于完全放松后,生成大量Nb5Si3。计算出Nb(001)/ Nb5Si3(001)界面的理想粘附力,并将其与块状Nb和Nb5Si3的粘附力进行比较。结果表明,块状Nb5Si3具有最大的附着力,bcc Nb排在第二,界面排在最后。此外,界面处的Nb-Si键比Nb-NbSi和Nb-Nb键弱,这意味着当准施加应力时,界面中的Nb-Si键最可能产生微裂纹。 -沿[001]方向静态。还分析了Nb(001)/ alpha-Nb5Si3(001)界面的状态密度,Mulliken种群和重叠种群。

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