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Organic phototransistors based on solution grown, ordered single crystalline arrays of a π-conjugated molecule

机译:基于溶液生长的π共轭分子的有序单晶阵列的有机光电晶体管

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摘要

High quality, single crystalline, ordered arrays of a π-conjugated organic molecule, N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8), were grown by solution processing and used to fabricate a low-cost, high-performance organic phototransistor (OPT). The single crystalline nature of the microstructure was investigated using 2D-GEXD measurement. The organic field-effect transistor fabricated using periodic arrays of elongated crystals exhibited a photoresponsivity (P) of ca. 1 A W~(-1) and a photo to dark current ratio (I_(on)/I_(off)) of 2.5 x 10~3 at V_G= 12 V and a maximum P of ca. 7 A W~(-1) at the high gate bias regime ( V_G = 50 V) with an optical power of ca. 7.5 mW cm~2. With polymeric gate dielectric, the OPT exhibited very stable n-type characteristics both in the dark and under light illumination and showed reproducible photo-switching behavior. The dependence of the photocurrent on the gate/drain voltage and on illumination intensity provided an effective way to control the number of photo-carriers generated in the active material, enabling the precise tuning of the device's performance. Performance comparison between OPTs with ordered crystal arrays and thin films of PTCDI-C8 confirmed that the material's intrinsic properties were better realized in the crystalline device, presumably because of higher charge carrier mobility and better charge transport capability. This one-step, solution-based, self-assembly fabrication of multifunctional (photodetection, photoswitching, signal amplification) optoelectronic devices has potential to aid the development of organic semiconductors with high-quality microanostructures for large-scale application and low-cost optoelectronic devices.
机译:通过溶液处理生长π共轭有机分子N,N'-二辛基-3,4,9,10-per四羧酸二酰亚胺(PTCDI-C8)的高质量单晶有序阵列,并用于制造低成本,高性能的有机光电晶体管(OPT)。使用2D-GEXD测量研究了微结构的单晶性质。使用细长晶体的周期性阵列制造的有机场效应晶体管表现出约600的光响应性(P)。 1 A W〜(-1),在V_G = 12 V时的光暗电流比(I_(on)/ I_(off))为2.5 x 10〜3,最大P为ca。在高栅极偏置状态(V_G = 50 V)时,光功率约为7 A W〜(-1)。 7.5兆瓦cm〜2。使用聚合物栅极电介质,OPT在黑暗和光线照射下均表现出非常稳定的n型特性,并具有可再现的光开关性能。光电流对栅极/漏极电压和照明强度的依赖性为控制活性材料中产生的光电载流子的数量提供了一种有效的方法,从而可以精确调节器件的性能。具有有序晶体阵列的OPT与PTCDI-C8薄膜之间的性能比较证实,该材料的固有特性在晶体器件中得到了更好的实现,这大概是由于更高的电荷载流子迁移率和更好的电荷传输能力。多功能(光电检测,光开关,信号放大)光电器件的这种基于解决方案的一步式自组装制造方法有潜力协助开发具有高质量微/纳米结构的有机半导体,以用于大规模应用和低成本光电器件。

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