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The effect of second-phase particles on grain refinement during equal-channel angular pressing in an Al-Cu-Mg-Ag alloy

机译:Al-Cu-Mg-Ag合金等通道角挤压过程中第二相颗粒对晶粒细化的影响

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In this work, the effect of second-phase particle distributions on grain refinement during equal-channel angular pressing (ECAP) was studied at 250 degrees C by comparing the microstructural evolution in an Al-Cu-Mg-Ag alloy processed in three different states. The first state (QA) was obtained by water quenching, and the second state was obtained by overaging at 250 degrees C. Both these states contain fine dispersions of Omega-phase shearable plates with coherent and/ or semi-coherent interfaces. The QA plate thickness prior to ECAP was higher by a factor of four than in the OA. The third alloy (HA) contained relatively coarse non-deformable particles of thermodynamically equilibrium phases with incoherent interfaces. It was shown that distribution of the secondary phase particles strongly affects the continuous dynamic recrystallization through the initial formation of geometrically necessary boundaries (GNBs), pinning dislocations and deformation-induced boundaries. The formation of a fully recrystallized structure occurs at the highest rate in the HA material with rounded grains because of 3D networks of low-angle boundaries (LABs) evolve at epsilon similar to 1 due to the concurrent formation of GNBs belonging to two families. In the QA and OA materials, the shearing of the X-phase plates with the coherent interfaces leads to the strong localization of dislocation slip and the dominant formation of one family of GNBs. Non-arrays for GNBs. As a result, only a partially recrystallized structure evolves, even at strains of up to epsilon similar to 12.
机译:在这项工作中,通过比较在三种不同状态下加工的Al-Cu-Mg-Ag合金的微观组织演变,研究了在250摄氏度下等通道角挤压(ECAP)过程中第二相颗粒分布对晶粒细化的影响。 。第一状态(QA)通过水淬获得,第二状态通过在250摄氏度下过时效获得。这两种状态均包含具有相干和/或半相干界面的Ω相可剪切板的细分散体。与OA中相比,ECAP之前的QA板厚度增加了四倍。第三合金(HA)包含具有不连贯界面的热力学平衡相的相对粗糙的不可变形颗粒。结果表明,次级相颗粒的分布通过几何必要边界(GNB)的初次形成,钉扎位错和形变诱发的边界的形成,对连续动态再结晶产生强烈影响。完全重结晶组织的形成在具有圆形晶粒的HA材料中发生率最高,这是因为由于同时形成了属于两个家族的GNB,低角度边界(LABs)的3D网络在epsilon处的演化类似于1。在QA和OA材料中,具有相干界面的X相板的剪切导致位错滑移的强烈定位和一个GNB族的显性形成。 GNB的非阵列。结果,即使在高达12的ε应变下,也只能形成部分重结晶的组织。

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