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MgB _2 with addition of Sb _2O _3 obtained by spark plasma sintering technique

机译:通过火花等离子体烧结技术获得的MgB _2和Sb _2O _3

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摘要

Superconducting bulks of MgB _2 with addition of Sb _2O _3 and Sb with different stoichiometric compositions ((MgB _2) + (Sb _2O _3) _x, x = 0.0025, 0.005, 0.015, and (MgB _2) + (Sb) _y, y = 0.01) were obtained by the Spark Plasma Sintering (SPS) technique. All added samples have high density, above 95% and critical temperature, T _c, of 38.1-38.6 K. This result and XRD data suggest that Sb does not enter the lattice of MgB _2. Impurity phases are Mg _3Sb _2, MgO, and MgB _4. The optimum addition is Sb _2O _3 for x = 0.005. This sample shows the critical current density, J _c(5 K, 0 T) = 4 × 10 ~5 A/cm ~2 and J _c(5 K, 7 T) = 6 × 10 ~2 A/cm ~2, while the irreversibility field, H _(irr) (5 K, 100 A/cm ~2) = 8.23 T. Indicated values of J _c and H _(irr) are higher than for the pristine sample. The mechanism of J _c and H _(irr) increase in the Sb _2O _3 added samples is complex and composed of opposite effects most probably involving morphology elements, the presence of nano metric MgB _4 and the indirect influence of oxygen or oxygen and Sb. Crystallite size of MgB _2 is decreasing when Sb-based additions are introduced and the effect is stronger for the Sb-metal addition. The sample with Sb-metal addition does not improve J _c and H _(irr) when compared with pristine sample.
机译:添加了Sb _2O _3和具有不同化学计量组成的(b)(MgB _2)+(Sb _2O _3)_x,x = 0.0025,0.005,0.015和(MgB _2)+(Sb)_y,y的Sb超导块体MgB _2 = 0.01)是通过火花等离子体烧结(SPS)技术获得的。所有添加的样品均具有高于95%的高密度和38.1-38.6 K的临界温度T _c。此结果和XRD数据表明,Sb未进入MgB _2晶格。杂质相为Mg _3Sb _2,MgO和MgB _4。对于x = 0.005,最佳添加量是Sb _2O _3。该示例显示了临界电流密度J _c(5 K,0 T)= 4×10〜5 A / cm〜2和J _c(5 K,7 T)= 6×10〜2 A / cm〜2,而不可逆字段H _(irr)(5 K,100 A / cm〜2)= 8.23T。J _c和H _(irr)的指示值高于原始样品。添加Sb _2O _3的样品中J _c和H _(irr)增加的机理很复杂,并且由相反的影响组成,最可能涉及形态元素,纳米级MgB _4的存在以及氧气或氧气和Sb的间接影响。当引入基于Sb的添加时,MgB _2的微晶尺寸减小,并且对于Sb-金属添加,效果更强。与原始样品相比,添加了Sb金属的样品不会提高J _c和H _(irr)。

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