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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Deformation-induced martensitic transformation in a new metastable beta titanium alloy
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Deformation-induced martensitic transformation in a new metastable beta titanium alloy

机译:新型亚稳态β钛合金中的形变马氏体相变

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摘要

A new metastable beta titanium alloy, Ti-4Al-7Mo-3V-3Cr (wt.%), was designed using d-electron method, aiming to tailor the deformation mechanism. Microstructural and X-ray diffraction analysis of deformed specimens conforming with the theoretical prediction of d-electron method, confirmed the formation of stress-induced martensite (SIM) and mechanical twinning as the deformation mechanisms. The effect of initial grain size, strain level and strain rate on the formation of SIM were investigated. The results showed that in a given grain size, the volume fraction of SIM initially increases intensively and then follows with lower rate reaching a saturation at 35% reduction. It was observed that after a decrease in the martensite laths interspace down to less than 2 mu m as a result of increasing the strain, some secondary martensite laths forms within the primary ones. It was found that with an increase in grain size from 150 mu m to 250 mu m, the volume fraction of SIM increases while a further increase in grain size up to 500 mu m leads to a decrease in SIM volume fraction. The compression test results at different strain rates ranging from 0.7 x 10(-4) to 0.7 x 10(-1) s(-1) showed SIM transformation occurs at all strain rates and although the triggering stress for SIM transformation increases continuously with an increase in strain rate, the volume fraction of SIM is independent of the strain rate. (C) 2015 Elsevier B.V. All rights reserved.
机译:利用d电子方法设计了一种新的亚稳态β钛合金Ti-4Al-7Mo-3V-3Cr(wt。%),旨在适应变形机理。变形样品的微观结构和X射线衍射分析符合d电子方法的理论预测,证实了应力诱发马氏体(SIM)的形成和机械孪晶是变形机理。研究了初始晶粒尺寸,应变水平和应变速率对SIM形成的影响。结果表明,在给定的晶粒尺寸下,SIM的体积分数最初会集中增加,然后以较低的速率达到35%的降低饱和。观察到,由于应变的增加,马氏体板条间距减小到小于2μm之后,一些次生马氏体板条在初生马氏体中形成。发现随着晶粒尺寸从150μm增加到250μm,SIM的体积分数增加,而晶粒尺寸进一步增加直至500μm导致SIM的体积分数减小。在从0.7 x 10(-4)到0.7 x 10(-1)s(-1)的不同应变速率下的压缩测试结果表明,在所有应变速率下都发生了SIM转换,尽管SIM转换的触发应力随着压力的增加而不断增加。如果增加应变率,则SIM的体积分数与应变率无关。 (C)2015 Elsevier B.V.保留所有权利。

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