Synthesis of high Al content Al_xGa_(1-x)N ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma

摘要

We present the synthesis of Al_xGa_(1-x)N ternary films by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in the environment of nitrogen plasma which provides nitrogen for the films and assists the formation of nitride films. Field emission scanning electron microscopy exposes the smooth surface appearance and dense film structure. X-ray diffraction, Fourier-transform infrared spectroscopy and Raman scattering spectroscopy reveal the hexagonal wurtzite structure. Optical characterization shows high optical transmittance with an absorption edge of about 260 nm and a band gap of 4.7 eV. Compositional analysis gives the Al content of about 0.6. The structure and optical properties of the Al_xGa_(1-x)N films are compared with those of binary GaN and A1N films synthesized by ablating GaAs or Al target with the same nitrogen plasma assistance.