首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >A series of new manganese thioarsenates(V) based on different unsaturated [Mn(amine)(x)](2+) complexes
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A series of new manganese thioarsenates(V) based on different unsaturated [Mn(amine)(x)](2+) complexes

机译:基于不同的不饱和[Mn(胺)(x)](2+)配合物的一系列新型硫代锰砷酸盐(V)

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A series of new manganese thioarsenates(V) [Mn(en)(2)Cu((AsS4)-S-V)](n) (1, en = ethylenediamine), [Mn(dien)(2)]-[Mn(dien)((AsS4)-S-V)](2) (2, dien = diethylenetriamine), [Mn(teta)((AsS4)-S-V)](n) (3, teta = triethylenetetramine), and {[Mn(dap)(2)][Mn(dap)((AsS4)-S-V)](2)}(n) (4, dap = 1,2-diaminopropane) have been solvothermally synthesized and structurally characterized. 1 displays a neutral heterometallic [Mn(en)(2)Cu((AsS4)-S-V)](n) chain built up from the linkages of [Mn(en)(2)](2+) complexes and infinite heterometallic [Cu((AsS4)-S-V)(2-)](n) chains, and represents the only example of incorporation of an unsaturated [Mn(en)(2)](2+) complex into the 1-D [Cu((AsS4)-S-V)(2-)] n framework. 2 consists of a discrete {[Mn(dien)](2)((AsS4)-S-V)(2)}(2-) cluster and a charge compensating complex cation [Mn(dien)(2)](2+). 3 shows a 1-D neutral [Mn(teta)((AsS4)-S-V)](n) chain constructed by the combination of both complex [Mn(teta)] (2+) ions and tetrahedral [(AsS4)-S-V](3-) anions. 4 exhibits a rare 2-D {[Mn(dap)(2)][Mn(dap)-((AsS4)-S-V)](2)}(n) layer based on the linkages of [(AsS4)-S-V](3-) anions and [Mn(dap)(x)](2+) (x = 1, 2) groups. These results show that different unsaturated [Mn(amine)(x)](2+) complexes are directly bonded to [(AsS4)-S-V](3-) anions to give different manganese thioarsenates(V), which have a significant structure directing effect on the structures of manganese thioarsenates(V) under similar solvothermal conditions. The present compounds exhibit wide-band-gap semiconducting properties with absorption band edges between 2.00 and 2.58 eV, and density functional theory calculations for compounds 1, 3 and 4 have also been performed.
机译:一系列新的硫代锰酸锰(V)[Mn(en)(2)Cu((AsS4)-SV)](n)(1,en =乙二胺),[Mn(dien)(2)]-[Mn( dien)((AsS4)-SV)](2)(2,dien =二亚乙基三胺),[Mn(teta)((AsS4)-SV)] [n)(3,teta =三亚乙基四胺)和{[Mn( dap)(2)] [Mn(dap)((AsS4)-SV)](2)}(n)(4,dap = 1,2-二氨基丙烷)的溶剂热合成和结构表征。图1显示了中性杂金属[Mn(en)(2)Cu((AsS4)-SV)] [n]链,这些链是由[Mn(en)(2)](2+)络合物与无限杂金属[ Cu((AsS4)-SV)(2-)](n)链,表示将不饱和[Mn(en(2)](2+)络合物并入1-D [Cu( (AsS4)-SV)(2-)] n框架。 2由离散的{[Mn(dien)](2)((AsS4)-SV)(2)}(2-)簇和电荷补偿复合阳离子[Mn(dien)(2)](2+)组成。图3显示了通过复合[Mn(teta)](2+)离子和四面体[(AsS4)-SV的组合构造的一维中性[Mn(teta)((AsS4)-SV)](n)链](3-)阴离子。图4基于[(AsS4)-SV的键合,展示了罕见的2-D {[Mn(dap)(2)] [Mn(dap)-((AsS4)-SV)](2)}(n)层](3-)阴离子和[Mn(dap)(x)](2+)(x = 1,2)基团。这些结果表明,不同的不饱和[Mn(胺)(x)](2+)络合物直接与[(AsS4)-SV](3-)阴离子键合,得到不同的硫代砷酸锰(V),具有明显的结构在相似的溶剂热条件下对硫代锰酸锰(V)结构的定向作用。本发明的化合物表现出宽带隙半导体性能,吸收带边缘在2.00和2.58eV之间,并且还进行了化合物1、3和4的密度泛函理论计算。

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