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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >Gas-phase structures of sterically crowded disilanes studied by electron diffraction and quantum chemical methods: 1,1,2,2-tetrakis(trimethylsilyl)disilane and 1,1,2,2-tetrakis(trimethylsilyl)dimethyldisilane
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Gas-phase structures of sterically crowded disilanes studied by electron diffraction and quantum chemical methods: 1,1,2,2-tetrakis(trimethylsilyl)disilane and 1,1,2,2-tetrakis(trimethylsilyl)dimethyldisilane

机译:通过电子衍射和量子化学方法研究空间拥挤的乙硅烷的气相结构:1,1,2,2-四(三甲基甲硅烷基)二硅烷和1,1,2,2-四(三甲基甲硅烷基)二甲基乙硅烷

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摘要

The gas-phase structures of the disilanes 1,1,2,2-tetrakis(trimethylsilyl)disilane [(Me_3Si)_2HSiSiH(SiMe_3)_2] (1) and 1,1,2,2-tetrakis(trimethylsilyl)dimethyldisilane [(Me_3Si)_2MeSiSiMe(SiMe_3)_2] (2) have been determined by density functional theoretical calculations and by gas electron diffraction (GED) employing the SARACEN method. For each of 1 and 2 DFT calculations revealed four C_2-symmetric conformers occupying minima on the respective potential-energy surfaces; three conformers were estimated to be present in sufficient quantities to be taken into account when fitting the GED data. For (Me_3Si)_2RSiSiR(SiMe_3)_2 [R = H (1), CH_3 (2)] the lowest energy conformers were found by GED to have RSiSiR dihedral angles of 87.7(17)° for 1 and-47.0(6)° for 2. For each of 1 and 2 the presence of bulky and flexible trimethylsilyl groups dictates many aspects of the geometric structures in the gas phase, with the molecules often adopting structures that reduce steric strain.
机译:乙硅烷1,1,2,2-四(三甲基硅烷基)乙硅烷[(Me_3Si)_2HSiSiH(SiMe_3)_2](1)和1,1,2,2-四(三甲基硅烷基)二甲基乙硅烷[[ Me_3Si)_2MeSiSiMe(SiMe_3)_2](2)已通过密度泛函理论计算和采用SARACEN方法的气体电子衍射(GED)确定。对于1和2的DFT计算中的每一个,发现四个C_2对称构象异构体在各自的势能面上占据极小值。据估计,在拟合GED数据时要考虑到的三个构象体的数量足够。对于(Me_3Si)_2RSiSiR(SiMe_3)_2 [R = H(1),CH_3(2)],GED发现最低能量构象异构体的RSiSiR二面角分别为87.7(17)°和1-47.0(6)°对于2和1中的每一个,大而灵活的三甲基甲硅烷基的存在决定了气相几何结构的许多方面,分子通常采用降低空间应变的结构。

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