首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Thickness-Dependent Air-Exposure-Induced Phase Transition of CuPc Ultrathin Films to Well-Ordered One-Dimensional Nanocrystals on Layered Substrates
【24h】

Thickness-Dependent Air-Exposure-Induced Phase Transition of CuPc Ultrathin Films to Well-Ordered One-Dimensional Nanocrystals on Layered Substrates

机译:CuPc超薄膜的厚度依赖性空气暴露诱导的相变到层状基底上的有序一维纳米晶体

获取原文
获取原文并翻译 | 示例
           

摘要

Highly ordered organic crystals are important building blocks for future high-performance organic nanodevices. Here we report a feasible way to produce arrays of well-ordered 1D copper phthalocyanine (CuPc) nanocrystals by using molybdenum disulfide (MoS2) or highly oriented pyrolytic graphite (HOPG) as substrates. The growth behaviors of CuPc on MoS2(0001) as well as on HOPG and corresponding effects of air exposure were systematically investigated by means of in situ photoemission spectroscopy (PES) and low-energy electron diffraction (LEED), combined with ex situ atomic force microscopy (AFM), surface X-ray diffraction (SXRD), and Raman spectroscopy. PES and LEED results show that CuPc molecules adopt a face-on configuration at thickness up to 4.8 nm, while AFM and SXRD results show that they adopt an edge-on configuration to form 1D nanocrystals in films thicker than 2.4 nm. Detailed analyses show that the formation of these 1D nanocrystals is closely related to air exposure, thicknesses, and growth temperature. Such 1D CuPc nanocrystals can be further optimized by tuning growth conditions and may have great potential for use in high-performance organic devices.
机译:高度有序的有机晶体是未来高性能有机纳米器件的重要组成部分。在这里,我们报告一种可行的方法,通过使用二硫化钼(MoS2)或高度取向的热解石墨(HOPG)作为基质来生产排列良好的一维铜酞菁(CuPc)纳米晶体阵列。利用原位光发射光谱法(PES)和低能电子衍射(LEED)结合异位原子力系统研究了CuPc在MoS2(0001)和HOPG上的生长行为以及空气暴露的相应影响显微镜(AFM),表面X射线衍射(SXRD)和拉曼光谱。 PES和LEED结果表明,CuPc分子在厚度最大4.8 nm时采用面对结构,而AFM和SXRD结果表明,它们在厚度大于2.4 nm的膜中采用边沿结构形成一维纳米晶体。详细的分析表明,这些一维纳米晶体的形成与空气暴露,厚度和生长温度密切相关。此类一维CuPc纳米晶体可通过调整生长条件进一步优化,并且在高性能有机器件中具有巨大的潜力。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号