首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Determination of Electronic Energy Levels in Type-ll CdTe-Core/ CdSe-Shell and CdSe-Core/CdTe-Shell Nanocrystals by Cyclic Voltammetry and Optical Spectroscopy
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Determination of Electronic Energy Levels in Type-ll CdTe-Core/ CdSe-Shell and CdSe-Core/CdTe-Shell Nanocrystals by Cyclic Voltammetry and Optical Spectroscopy

机译:循环伏安法和光学光谱法测定II型CdTe-核/ CdSe-壳和CdSe-核/ CdTe-壳纳米晶体中的电子能级

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摘要

Two different sets of type-II core/shell semiconductor nanocrystals (NCs) are prepared and studied by optical absorption, time-resolved and time-integrated photo-luminescence (PL) spectroscopy, as well as cyclic voltammetry (CV). In particular, NCs with a CdTe core and a CdSe shell of variable thickness, where the holes are localized in the core and the electrons are mainly in the shell, are compared with their inverse system of a CdSe core and a CdTe shell. All measurements are correlated to model calculations based on the effective mass approximation (EMA). The comprehensive study reveals a good congruence between optical and electrochemical measurements and theoretical modeling. In particular, we find a good coincidence between the shell-thickness dependence of the band gap as measured in PL experiments, as determined from CV data, and as calculated. Interestingly, the cyclic voltammograms, which also allow for the determination of absolute electronic energy levels, are rich in features: for various shell thicknesses, several reduction and oxidation features are observed. The comparison of the energy positions and intensities of the CV signals with calculated energy levels and probability density functions from the EMA for different shell thicknesses reveals that several CV signals can be attributed to reduction or oxidation via quantized electronic ground or excited states of the type-II core/shell NCs, while others are assigned to surface states.
机译:通过光吸收,时间分辨和时间积分光致发光(PL)光谱以及循环伏安法(CV),制备和研究了两组不同的II型核/壳半导体纳米晶体。特别是,将具有CdTe核和厚度可变的CdSe壳的NC(其中的空穴位于核中,而电子主要位于壳中)与它们的CdSe核和CdTe壳的逆系统进行了比较。所有测量都与基于有效质量近似(EMA)的模型计算相关。全面的研究揭示了光学和电化学测量与理论建模之间的良好一致性。尤其是,我们发现,在PL实验中测得的,根据CV数据确定并计算出的带隙的壳厚度依赖性之间有很好的一致性。有趣的是,循环伏安图(也可以确定绝对电子能级)具有很多特征:对于各种壳厚度,可以观察到几种还原和氧化特征。比较CV信号的能量位置和强度与针对不同壳厚度从EMA计算得到的能量水平和概率密度函数后发现,可以通过以下类型的量化电子基态或激发态将多个CV信号归因于还原或氧化: II核/壳NC,其他则分配给表面状态。

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