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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Thermally Stable Ternary Data-Storage Device Based on Twisted Anthraquinone Molecular Design
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Thermally Stable Ternary Data-Storage Device Based on Twisted Anthraquinone Molecular Design

机译:基于双蒽醌分子设计的热稳定三元数据存储装置

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摘要

Three donor—acceptor and twisted anthraquinone azo molecules were synthesized, and the effects of conjugated backbones length, alkyl chains length, and the thermal annealing temperature on the memory characteristics were explored. The device based on Azo-02, which has longer conjugated backbone and alkyl chains, exhibited stable nonvolatile ternary memory behavior as the thermal annealing temperature increased, with basically the same switching threshold voltages and current ratios being ~1:10~(3.43):10~(5.50). For the "counterpart" molecules (Azo-01 and Azo-03) film, defects appeared or disordered, crystal packing formed as the thermal annealing temperature increased, and the corresponding devices exhibited no obvious conductance switching behaviors. The mechanism related to electrical switching properties and WORM (write-once-read-many-times) behaviors were elucidated through molecular simulation. The results demonstrated that the long-term thermally stable high-density data-storage devices can he fabricated by adjusting the structures of twisted molecules.
机译:合成了三个供体-受体和扭曲的蒽醌偶氮分子,探讨了共轭主链长度,烷基链长度和热退火温度对记忆特性的影响。基于Azo-02的装置具有更长的共轭主链和烷基链,随着热退火温度的升高,其显示出稳定的非易失性三元记忆特性,基本相同的开关阈值电压和电流比为〜1:10〜(3.43): 10〜(5.50)。对于“对应”分子(Azo-01和Azo-03)膜,出现缺陷或无序,随着热退火温度的升高形成晶体堆积,相应的器件没有明显的电导切换行为。通过分子模拟阐明了与电开关特性和WORM(一次写入多次读取)行为有关的机理。结果表明,可以通过调节扭曲分子的结构来制造长期热稳定的高密度数据存储设备。

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