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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Band Gap Tunability in Semiconductor Nanocrystals by Strain: Size and Temperature Effect
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Band Gap Tunability in Semiconductor Nanocrystals by Strain: Size and Temperature Effect

机译:通过应变在半导体纳米晶体中的带隙可调谐性:尺寸和温度效应

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摘要

We put forward a theoretical model to elucidate the impact of strain on the electronic band gap tunability of semiconductor nanocrystals both in self-equilibrium state and stimulated by thermal approach from the perspective of atomistic origin based on the recently developed relationship between bond length and bond energy. Theoretical analyses pointed out the band gaps are significantly modified with changing solid size and temperature due to the development of a large lattice strain and found that the strains originated from thermal approach and that in a self-equilibrium state play the competitive role for the band offsets. Agreement between our theoretical predictions and experimental observations and simulations provides a new insight into the physical understanding on the electronic and optical properties of semiconductor nanocrystals.
机译:我们基于最近发展的键长和键能之间的关系,从原子起源的角度提出了一种理论模型,以阐明应变对自平衡态和热方法激发的半导体纳米晶体电子带隙可调谐性的影响。 。理论分析指出,由于大晶格应变的发展,带隙随着固体尺寸和温度的变化而显着改变,并且发现应变源自热方法,并且在自平衡状态下对带隙起竞争作用。 。我们的理论预测与实验观察与模拟之间的一致性为对半导体纳米晶体的电子和光学性质的物理理解提供了新的见解。

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